Siemens SMBD2835, SMBD2836 Datasheet

Silicon Switching Diode Array	SMBD 2835
	SMBD 2836

●For high-speed switching applications

●Common anode

Type	Marking	Ordering Code	Pin Configuration	Package1)
		(tape and reel)
SMBD 2835	sA3	Q68000-A8547		SOT-23
SMBD 2836	sA2	Q68000-A8436

Maximum Ratings

Parameter	Symbol	Values			Unit
		SMBD 2835		SMBD 2836
Reverse voltage	VR	30		50	V
Peak reverse voltage	VRM	35		75
Forward current	IF	200			mA
Surge forward current, t = 1 μs	IFS		4.5		A
Total power dissipation, TS = 31 ˚C	Ptot	330			mW
Junction temperature	Tj	150			˚C
Storage temperature range	Tstg	– 65 … + 150
Thermal Resistance
Junction - ambient2)	Rth JA	≤ 500			K/W
Junction - soldering point	Rth JS	≤ 360

1)For detailed information see chapter Package Outlines.

2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

SMBD 2835

SMBD 2836

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter		Symbol		Values		Unit
			min.	typ.	max.
DC characteristics
Breakdown voltage		V(BR)				V
I(BR) = 100 μA	SMBD 2835		35	–	–
	SMBD 2836		75	–	–
Forward voltage		VF				mV
IF = 10 mA			–	–	855
IF = 50 mA			–	–	1000
IF = 100 mA			–	–	1200
Reverse current		IR				nA
VR = 30 V	SMBD 2835		–	–	100
VR = 50 V	SMBD 2836		–	–	100
AC characteristics
Diode capacitance		CD	–	–	4	pF
VR = 0, f = 1 MHz
Reverse recovery time		trr	–	–	6	ns
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
Test circuit for reverse recovery time

Pulse generator: tp = 100 ns, D = 0.05	Oscillograph: R = 50 Ω
tr = 0.6 ns, Rj = 50 Ω	tr = 0.35 ns
	C ≤ 1 pF

Semiconductor Group

2