SMBT6428
NPN Silicon Transistors SMBT 6428
SMBT 6429
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
Type Ordering Code
SMBT 6428
SMBT 6429
Marking
s1K
s1L
(tape and reel)
Q68000-A8321
Q68000-A8322
Pin Configuration
1 2 3
B E C
Package
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
SMBT 6428 SMBT 6429
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Total power dissipation, T
S = 71 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
CE0 V
50 45
60 55
EB0
6
200
330
150
stg
– 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Rth JA ≤ 310 K/W
Junction - soldering point Rth JS ≤ 240
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
SMBT 6428
SMBT 6429
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA SMBT 6428
SMBT 6429
Collector-base breakdown voltage
C = 10 µA SMBT 6428
(BR)CB0
V
SMBT 6429
Emitter-base breakdown voltage
E = 1 µA
Collector-base cutoff current
CB = 30 V, IE = 0
V
CB = 30 V, IE = 0, TA = 150 ˚C
V
CE = 30 V, IB = 0
V
Emitter-base cutoff current
EB = 5 V, IC = 0
V
V
(BR)EB0 6––
CB0
I
I
CE0 – – 100
I
EB0 ––10
50
45
60
55
–
–
–
–
–
–
–
–
–
–
–
–
10
10
hFE
C = 10 µA, VCE = 5 V SMBT 6428
SMBT 6429
C = 100 µA, VCE = 5 V SMBT 6428
SMBT 6429
C = 1 mA, VCE = 5 V SMBT 6428
SMBT 6429
C = 10 mA, VCE = 5 V SMBT 6428
SMBT 6429
Collector-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter voltage
C = 1 mA, VCE = 5 V
1)
V
BE(on) 0.56 – 0.66
250
500
250
500
250
500
250
500
–
–
–
–
–
–
–
–
–
–
–
–
–
–
650
1250
–
–
–
–
0.2
0.6
VCollector-emitter breakdown voltage
nA
µA
nACollector cutoff current
–DC current gain
VVCEsat
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 2
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