Philips 1N5266B, 1N5265B, 1N5264B, 1N5263B, 1N5261B Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N5225B to 1N5267B

Voltage regulator diodes

Product specification			1996 Apr 26
Supersedes data of April 1992

Philips Semiconductors	Product specification
Voltage regulator diodes	1N5225B to 1N5267B

FEATURES

∙Total power dissipation: max. 500 mW

∙Tolerance series: ±5%

∙Working voltage range: nom. 3.0 to 75 V

∙Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

∙Low-power voltage stabilizers or voltage references.

DESCRIPTION

Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages.

The series consists of 43 types with nominal working voltages from 3.0 to 75 V.

k

a

MAM239

The diodes are type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
IF	continuous forward current		−	250	mA
IZSM	non-repetitive peak reverse current	tp = 100 μs; square wave;	see Table
		Tj = 25 °C prior to surge	“Per type”
Ptot	total power dissipation	Tamb = 50 °C; lead length max.;	−	400	mW
		note 1
		Lead length 8 mm; note 2	−	500	mW
PZSM	non-repetitive peak reverse power	tp = 100 μs; square wave;	−	40	W
	dissipation	Tj = 25 °C prior to surge; see Fig.3
		tp = 8.3 ms; square wave;	−	10	W
		Tj ≤ 55 °C prior to surge
Tstg	storage temperature		−65	+200	°C
Tj	junction temperature		−65	+200	°C

Notes

1.Device mounted on a printed circuit-board without metallization pad.

2.Tie-point temperature ≤ 75 °C.

ELECTRICAL CHARACTERISTICS

Table 1

Tj = 25 °C; unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
VF	forward voltage	IF = 200 mA; see Fig.4	1.1	V

1996 Apr 26

2

26 Apr 1996

3

Per type

Tj = 25 °C; unless otherwise specified.

	WORKING			DIFFERENTIAL			TEMP. COEFF.			TEST		DIODE CAP.	REVERSE CURRENT			NON-REPETITIVE PEAK
	VOLTAGE			RESISTANCE			SZ (%/K)		CURRENT			Cd (pF)	at REVERSE			REVERSE CURRENT
	V	Z	(V)(1)	r	dif	(Ω)	at I	(2)	I	Ztest	(mA)	at f = 1 MHz;	VOLTAGE			I (A)
TYPE No.							Z									ZSM
	at IZtest			at IZtest								at VR = 0 V				tp = 100 μs; Tamb = 25 °C
													IR (μA)		VR
	NOM.			MAX.			MAX.					MAX.	MAX.		(V)	MAX.
1N5225B			3.0	1600			−0.075			20		450	50		1.0	6.0
1N5226B			3.3	1600			−0.070			20		450	25		1.0	6.0
1N5227B			3.6	1700			−0.065			20		450	15		1.0	6.0
1N5228B			3.9	1900			−0.060			20		450	10		1.0	6.0
1N5229B			4.3	2000			±0.055			20		450	5		1.0	6.0
1N5230B			4.7	1900			±0.030			20		450	5		1.5	6.0
1N5231B			5.1	1600			±0.030			20		300	5		2.0	6.0
1N5232B			5.6	1600			+0.038			20		300	5		3.0	6.0
1N5233B			6.0	1600			+0.038			20		300	5		3.5	6.0
1N5234B			6.2	1000			+0.045			20		200	5		4.0	6.0
1N5235B			6.8		750		+0.050			20		200	3		5.0	6.0
1N5236B			7.5		500		+0.058			20		150	3		6.0	4.0
1N5237B			8.2		500		+0.062			20		150	3		6.5	4.0
1N5238B			8.7		600		+0.065			20		150	3		6.5	3.5
1N5239B			9.1		600		+0.068			20		150	3		7.0	3.0
1N5240B		10			600		+0.075			20		90	3		8.0	3.0
1N5241B		11			600		+0.076			20		85	2		8.4	2.5
1N5242B		12			600		+0.077			20		85	1		9.1	2.5
1N5243B		13			600		+0.079			9.5		80	0.5		9.9	2.5
1N5244B		14			600		+0.082			9.0		80	0.1		10.0	2.0
1N5245B		15			600		+0.082			8.5		75	0.1		11.0	2.0
1N5246B		16			600		+0.083			7.8		75	0.1		12.0	1.5
1N5247B		17			600		+0.084			7.4		75	0.1		13.0	1.5
1N5248B		18			600		+0.085			7.0		70	0.1		14.0	1.5
1N5249B		19			600		+0.086			6.6		70	0.1		14.0	1.5
1N5250B		20			600		+0.086			6.2		60	0.1		15.0	1.5

diodes regulator Voltage

1N5267B to 1N5225B

Semiconductors Philips

specification Product