Philips 1N4749A, 1N4747A, 1N4740A, 1N4737A, 1N4735A Datasheet

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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D130
1N4728A to 1N4749A
Voltage regulator diodes
Product specification Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors Product specification
Voltage regulator diodes 1N4728A to 1N4749A
FEATURES
Total power dissipation: max. 1000 mW
DESCRIPTION
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages. The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
Tolerance series: ±5%
Working voltage range:
nom. 3.3 to 24 V.
APPLICATIONS
Low voltage stabilizers.
The diodes are type branded.
handbook, halfpage
ka
MAM241
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZM
continuous forward current 500 mA working current see Table
“Per type”
I
ZSM
non-repetitive peak reverse current see Table
“Per type”
P
tot
T
stg
T
j
total power dissipation T
=50°C 1000 mW
amb
storage temperature 65 +200 °C junction temperature 65 +200 °C
ELECTRICAL CHARACTERISTICS Total series
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage IF= 200 mA; see Fig.3 1.2 V
1996 Apr 26 2
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