OM6227SS OM6230SS OM6232SS
OM6228SS OM6231SS OM6233SS
DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
400V, 500V, 1000V, Up To 24 Amp N-Channel,
Dual Size 6 High Energy MOSFETs
FEATURES
•Dual Uncommitted MOSFETs
•Isolated Hermetic Metal Package
•Size 6 Die, High Energy, High Voltage
•Fast Switching, Low Drive Current
•Ease of Paralleling For Added Power
•Low RDS(on)
•Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS
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3.1 |
PART NUMBER |
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VDS |
RDS(on) |
ID (Amp) |
*Package |
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OM6227SS |
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400 |
.20 |
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24 |
S-6D |
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OM6228SS |
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500 |
.27 |
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22 |
S-6D |
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OM6230SS |
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1000 |
1.30 |
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10 |
S-6D |
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OM6231SS |
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400 |
.20 |
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24 |
S-6E |
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OM6232SS |
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500 |
.27 |
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22 |
S-6E |
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OM6233SS |
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1000 |
1.30 |
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10 |
S-6E |
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* See Mechanical Drawing |
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SCHEMATIC |
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DRAIN |
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1 |
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DRAIN |
6 |
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GATE |
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3 |
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SOURCE |
2 |
BODY |
GATE |
BODY |
DIODE |
4 |
DIODE |
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SOURCE |
5 |
4 11 R2 |
3.1 - 123 |
Supersedes 2 07 R1 |
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1.3 |
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ELECTRICAL CHARACTERISTICS: 400V (Per MOSFET) |
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ELECTRICAL CHARACTERISTICS: 500V (Per MOSFET) |
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(TC = 25° unless otherwise noted) |
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(TC = 25° unless otherwise noted) |
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Characteristic |
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Symbol |
Min. |
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Typ. |
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Max. |
Unit |
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Characteristic |
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Symbol |
Min. |
Typ. |
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Max. |
Unit |
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OFF CHARACTERISTICS |
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OFF CHARACTERISTICS |
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Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) |
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V(BR)DSS |
400 |
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- |
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- |
Vdc |
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Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) |
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V(BR)DSS |
500 |
- |
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- |
Vdc |
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Zero Gate Voltage Drain |
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IDSS |
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mAdc |
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Zero Gate Voltage Drain |
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IDSS |
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mAdc |
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(VDS = 400 V, VGS = 0) |
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- |
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- |
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0.25 |
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(VDS = 500 V, VGS = 0) |
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- |
- |
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0.25 |
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(VDS = 320 V, VGS = 0, TJ = 125° C) |
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- |
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- |
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1.0 |
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(VDS = 500 V, VGS = 0, TJ = 125° C) |
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- |
- |
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1.0 |
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Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) |
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IGSSF |
- |
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- |
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100 |
nAdc |
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Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) |
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IGSSF |
- |
- |
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100 |
nAdc |
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Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) |
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IGSSR |
- |
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- |
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100 |
nAdc |
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Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) |
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IGSSR |
- |
- |
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100 |
nAdc |
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ON CHARACTERISTICS* |
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ON CHARACTERISTICS* |
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Gate-Threshold Voltage |
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VGS(th) |
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Vdc |
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Gate-Threshold Voltage |
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VGS(th) |
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Vdc |
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(VDS = VGS, ID = 0.25 mAdc |
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2.0 |
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3.0 |
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4.0 |
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(VDS = VGS, ID = 0.25 mAdc |
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2.0 |
3.0 |
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4.0 |
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(TJ = 125° C) |
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1.5 |
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- |
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3.5 |
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(TJ = 125° C) |
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1.5 |
- |
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3.5 |
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Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc) |
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rDS(on) |
- |
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- |
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0.20 |
Ohm |
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Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 13 Adc) |
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rDS(on) |
- |
- |
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0.27 |
Ohm |
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Drain-Source On-Voltage (VGS = 10 Vdc) |
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VDS(on) |
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Vdc |
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Drain-Source On-Voltage (VGS = 10 Vdc) |
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VDS(on) |
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Vdc |
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(ID = 24 A) |
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- |
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- |
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5.0 |
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(ID = 24 A) |
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- |
- |
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8.0 |
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(ID = 12 A, TJ = 125° C) |
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- |
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- |
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5.0 |
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(ID = 12 A, TJ = 125° C) |
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- |
- |
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8.0 |
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Forward Transconductance (VDS = 15 Vdc, ID = 12A Adc) |
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gFS |
14 |
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- |
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- |
mhos |
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Forward Transconductance (VDS = 15 Vdc, ID = 13 Adc) |
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gFS |
13 |
- |
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- |
mhos |
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DYNAMIC CHARACTERISTICS |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VDS = 25 V, VGS = 0, |
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Ciss |
- |
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4000 |
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pF |
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Input Capacitance |
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(VDS = 25 V, VGS = 0, |
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Ciss |
- |
4000 |
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pF |
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3 |
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Output Capacitance |
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f = 1.0 MHz) |
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Coss |
- |
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550 |
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- |
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Output Capacitance |
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f = 1.0 MHz) |
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Coss |
- |
480 |
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- |
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Transfer Capacitance |
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Crss |
- |
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110 |
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- |
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Transfer Capacitance |
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Crss |
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95 |
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1. |
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SWITCHING CHARACTERISTICS |
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SWITCHING CHARACTERISTICS |
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124 |
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Turn-On Delay Time |
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td(on) |
- |
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35 |
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- |
ns |
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Turn-On Delay Time |
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td(on) |
- |
32 |
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ns |
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Rise Time |
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(VDD = 250 V, ID = 24 A, |
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tr |
- |
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95 |
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- |
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Rise Time |
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(VDD = 250 V, ID = 24 A, |
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tr |
- |
95 |
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- |
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Turn-Off Delay Time |
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Rgen = 4.3 ohms) |
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td(off) |
- |
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80 |
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- |
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Turn-Off Delay Time |
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Rgen = 4.3 ohms) |
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td(off) |
- |
75 |
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- |
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Fall Time |
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tf |
- |
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80 |
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- |
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Fall Time |
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tf |
- |
75 |
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- |
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Total Gate Charge |
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(VDS = 400 V, ID = 24 A, |
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Qg |
- |
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110 |
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14 |
0nC |
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Total Gate Charge |
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(VDS = 400 V, ID = 24 A, |
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Qg |
- |
115 |
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140 |
nC |
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Gate-Source Charge |
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VGS = 10 V) |
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Qgs |
- |
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20 |
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- |
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Gate-Source Charge |
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VGS = 10 V) |
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Qgs |
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20 |
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- |
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Gate-Drain Charge |
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Qgd |
- |
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80 |
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- |
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Gate-Drain Charge |
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Qgd |
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60 |
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SOURCE DRAIN DIODE CHARACTERISTICS |
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SOURCE DRAIN DIODE CHARACTERISTICS |
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Forward On-Voltage |
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VSD |
- |
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1.1 |
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1.6 |
Vdc |
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Forward On-Voltage |
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VSD |
- |
1.1 |
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1.6 |
Vdc |
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Forward Turn-On Time |
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(IS = 24 A, d/dt = 100 A/µs) |
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ton |
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** |
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ns |
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Forward Turn-On Time |
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(IS = 24 A, d/dt = 100 A/µs) |
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ton |
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** |
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ns |
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Reverse Recovery Time |
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trr |
- |
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500 |
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1000 |
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Reverse Recovery Time |
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trr |
- |
500 |
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1000 |
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* |
Indicates Pulse Test = 300 µsec, Duty Cycle = 2% |
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* |
Indicates Pulse Test = 300 µsec, Duty Cycle = 2% |
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** |
Limited by circuit inductance |
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** |
Limited by circuit inductance |
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UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°) |
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Symbol |
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Value |
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Unit |
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Single Pulse Drain-To-Source Avalanche Energy |
TJ = 25°C |
WDSS (1) |
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1000 |
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TJ = 100°C |
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160 |
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mJ |
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Repetitive Pulse Drain-To-Source Avalanche Energy |
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WDSS (2) |
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25 |
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(1)VDD = 50V, ID = 10A
(2)Pulse width and frequency is limited by TJ(max) and thermal response.
OM6233SS - OM6227SS