OMNIREL OM6020SA, OM6019SA, OM6018SA, OM6017SA Datasheet

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OM6017SA OM6019SA

OM6018SA OM6020SA

POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE

100V Thru 500V, Up To 25 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

Isolated Hermetic Metal Package

Fast Switching

Low RDS(on)

Available Screened To MIL-S-19500, TX, TXV And S Levels

Same as IRFM 150 - 450 Series

Ceramic Feedthroughs Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

MAXIMUM RATINGS @ 25°C

 

 

 

 

 

PART NUMBER

VDS

 

RDS(on)

 

 

ID

 

 

 

 

 

 

 

OM6017SA

100 V

.065

 

 

 

 

25 A

 

 

 

 

 

 

 

OM6018SA

200 V

.100

 

 

 

 

25 A

 

 

3.1

 

 

 

 

 

OM6019SA

400 V

.33

 

 

 

 

 

13 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OM6020SA

500 V

.42

 

 

 

 

 

11 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCHEMATIC

 

 

POWER RATING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4 11 R4

3.1 - 85

Supersedes 1 07 R3

 

 

OMNIREL OM6020SA, OM6019SA, OM6018SA, OM6017SA Datasheet

86 - 1.3

1.3

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OM6017SA

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

100

 

 

V

VGS = 0,

 

Voltage

 

 

ID = 250 mA

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VGS = +20 V

IGSSR

Gate-Body Leakage Reverse

 

 

- 100

nA

VGS = -20 V

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

mA

VDS = Max. Rat., VGS = 0

 

Current

 

0.2

1.0

mA

VDS = 0.8 Max. Rat., VGS = 0,

 

 

 

TC = 125° C

 

 

 

 

 

 

ID(on)

On-State Drain Current1

35

 

 

A

VDS 2 VDS(on), VGS = 10 V

VDS(on)

Static Drain-Source On-State

 

1.1

1.3

V

VGS = 10 V, ID = 20 A

 

Voltage1

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

0.55

0.65

 

VGS = 10 V, ID = 20 A

 

Resistance1

 

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

.09

0.11

 

VGS = 10 V, ID = 20 A,

 

Resistance1

 

 

TC = 125 C

 

 

 

 

 

DYNAMIC

gfs

Forward Transductance1

9.0

 

 

S()WW)(

VDS 2 VDS(on), ID = 20 A

Ciss

Input Capacitance

 

2700

 

pF

VGS = 0

Coss

Output Capacitance

 

1300

 

pF

VDS = 25 V

Crss

Reverse Transfer Capacitance

 

470

 

pF

f = 1 MHz

td(on)

Turn-On Delay Time

 

28

 

ns

VDD = 30 V, ID @ 20 A

tr

Rise Time

 

45

 

ns

Rg = 5.0 W , VG = 10V

 

 

 

 

 

 

(MOSFET switching times are

td(off)

Turn-Off Delay Time

 

100

 

ns

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

50

 

ns

operating temperature.)

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OM6018SA

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

200

 

 

V

VGS = 0,

 

Voltage

 

 

ID = 250 mA

 

 

 

 

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VDS = VGS, ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VGS = + 20 V

IGSSR

Gate-Body Leakage Reverse

 

 

-100

nA

VGS = - 20 V

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

mA

VDS = Max. Rat., VGS = 0

 

Current

 

0.2

1.0

mA

VDS = 0.8 Max. Rat., VGS = 0,

 

 

 

TC = 125° C

 

 

 

 

 

 

 

 

 

 

 

 

 

ID(on)

On-State Drain Current1

30

 

 

A

VDS 2 VDS(on), VGS = 10 V

VDS(on)

Static Drain-Source On-State

 

1.36

1.60

V

VGS = 10 V, ID = 16 A

 

Voltage1

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

.085

.100

 

VGS = 10 V, ID = 16 A

 

Resistance1

 

 

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

0.14

0.17

 

VGS = 10 V, ID = 16 A,

 

Resistance1

 

 

TC = 125 C

 

 

 

 

 

DYNAMIC

gfs

Forward Transductance1

10.0

 

 

S()WW)(

VDS 2 VDS(on), ID = 16 A

Ciss

Input Capacitance

 

2400

 

pF

VGS = 0

Coss

Output Capacitance

 

600

 

pF

VDS = 25 V

Crss

Reverse Transfer Capacitance

 

250

 

pF

f = 1 MHz

td(on)

Turn-On Delay Time

 

25

 

ns

VDD = 75 V, ID @ 16 A

tr

Rise Time

 

60

 

ns

Rg = 5.0 W ,VGS = 10V

 

 

 

 

 

 

(MOSFET switching times are

td(off)

Turn-Off Delay Time

 

85

 

ns

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

38

 

ns

operating temperature.)

 

 

 

 

 

 

 

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

 

Modified MOSPOWER

D

- 40

A

 

 

(Body Diode)

symbol showing

 

 

 

 

 

ISM

Source Current1

 

 

G

 

- 160

A

the integral P-N

 

 

(Body Diode)

Junction rectifier.

S

 

 

 

VSD

Diode Forward Voltage1

- 2.5

V

TC = 25 C, IS = -40 A, VGS = 0

trr

Reverse Recovery Time

400

ns

TJ = 150 C, IF = IS,

 

dlF/ds = 100 A/ms

 

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

 

 

 

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

 

Modified MOSPOWER

D

- 30

A

 

 

(Body Diode)

symbol showing

 

 

 

 

 

ISM

Source Current1

 

 

G

 

- 120

A

the integral P-N

 

 

(Body Diode)

Junction rectifier.

S

 

 

 

VSD

Diode Forward Voltage1

- 2

V

TC = 25 C, IS = -30 A, VGS = 0

trr

Reverse Recovery Time

350

ns

TJ = 150 C, IF = IS,

 

dlF/ds = 100 A/ms

 

1 Pulse Test: Pulse Width 300msec, Duty Cycle

2%.

 

 

 

OM6020SA - OM6017SA

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