OM6017SA OM6019SA
OM6018SA OM6020SA
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•Isolated Hermetic Metal Package
•Fast Switching
•Low RDS(on)
•Available Screened To MIL-S-19500, TX, TXV And S Levels
•Same as IRFM 150 - 450 Series
•Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25°C
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PART NUMBER |
VDS |
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RDS(on) |
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ID |
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OM6017SA |
100 V |
.065 |
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25 A |
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OM6018SA |
200 V |
.100 |
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25 A |
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3.1 |
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OM6019SA |
400 V |
.33 |
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13 A |
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OM6020SA |
500 V |
.42 |
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11 A |
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SCHEMATIC |
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POWER RATING |
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4 11 R4 |
3.1 - 85 |
Supersedes 1 07 R3 |
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86 - 1.3
1.3
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6017SA
Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
100 |
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V |
VGS = 0, |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VDS = VGS, ID = 250 mA |
IGSSF |
Gate-Body Leakage Forward |
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100 |
nA |
VGS = +20 V |
IGSSR |
Gate-Body Leakage Reverse |
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- 100 |
nA |
VGS = -20 V |
IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
mA |
VDS = Max. Rat., VGS = 0 |
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Current |
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0.2 |
1.0 |
mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
35 |
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A |
VDS 2 VDS(on), VGS = 10 V |
VDS(on) |
Static Drain-Source On-State |
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1.1 |
1.3 |
V |
VGS = 10 V, ID = 20 A |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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0.55 |
0.65 |
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VGS = 10 V, ID = 20 A |
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Resistance1 |
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RDS(on) |
Static Drain-Source On-State |
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.09 |
0.11 |
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VGS = 10 V, ID = 20 A, |
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Resistance1 |
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TC = 125 C |
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DYNAMIC
gfs |
Forward Transductance1 |
9.0 |
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S()WW)( |
VDS 2 VDS(on), ID = 20 A |
Ciss |
Input Capacitance |
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2700 |
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pF |
VGS = 0 |
Coss |
Output Capacitance |
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1300 |
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pF |
VDS = 25 V |
Crss |
Reverse Transfer Capacitance |
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470 |
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pF |
f = 1 MHz |
td(on) |
Turn-On Delay Time |
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28 |
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ns |
VDD = 30 V, ID @ 20 A |
tr |
Rise Time |
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45 |
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ns |
Rg = 5.0 W , VG = 10V |
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(MOSFET switching times are |
td(off) |
Turn-Off Delay Time |
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100 |
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ns |
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essentially independent of |
tf |
Fall Time |
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50 |
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ns |
operating temperature.) |
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ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N OM6018SA
Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
200 |
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V |
VGS = 0, |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VDS = VGS, ID = 250 mA |
IGSSF |
Gate-Body Leakage Forward |
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100 |
nA |
VGS = + 20 V |
IGSSR |
Gate-Body Leakage Reverse |
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-100 |
nA |
VGS = - 20 V |
IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
mA |
VDS = Max. Rat., VGS = 0 |
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Current |
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0.2 |
1.0 |
mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
30 |
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A |
VDS 2 VDS(on), VGS = 10 V |
VDS(on) |
Static Drain-Source On-State |
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1.36 |
1.60 |
V |
VGS = 10 V, ID = 16 A |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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.085 |
.100 |
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VGS = 10 V, ID = 16 A |
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Resistance1 |
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RDS(on) |
Static Drain-Source On-State |
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0.14 |
0.17 |
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VGS = 10 V, ID = 16 A, |
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Resistance1 |
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TC = 125 C |
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DYNAMIC
gfs |
Forward Transductance1 |
10.0 |
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S()WW)( |
VDS 2 VDS(on), ID = 16 A |
Ciss |
Input Capacitance |
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2400 |
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pF |
VGS = 0 |
Coss |
Output Capacitance |
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600 |
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pF |
VDS = 25 V |
Crss |
Reverse Transfer Capacitance |
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250 |
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pF |
f = 1 MHz |
td(on) |
Turn-On Delay Time |
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25 |
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ns |
VDD = 75 V, ID @ 16 A |
tr |
Rise Time |
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60 |
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ns |
Rg = 5.0 W ,VGS = 10V |
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(MOSFET switching times are |
td(off) |
Turn-Off Delay Time |
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85 |
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ns |
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essentially independent of |
tf |
Fall Time |
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38 |
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ns |
operating temperature.) |
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BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS |
Continuous Source Current |
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Modified MOSPOWER |
D |
- 40 |
A |
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(Body Diode) |
symbol showing |
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ISM |
Source Current1 |
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G |
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- 160 |
A |
the integral P-N |
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(Body Diode) |
Junction rectifier. |
S |
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VSD |
Diode Forward Voltage1 |
- 2.5 |
V |
TC = 25 C, IS = -40 A, VGS = 0 |
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trr |
Reverse Recovery Time |
400 |
ns |
TJ = 150 C, IF = IS, |
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dlF/ds = 100 A/ms |
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1 Pulse Test: Pulse Width 300msec, Duty Cycle |
2%. |
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BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS |
Continuous Source Current |
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Modified MOSPOWER |
D |
- 30 |
A |
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(Body Diode) |
symbol showing |
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ISM |
Source Current1 |
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G |
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- 120 |
A |
the integral P-N |
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(Body Diode) |
Junction rectifier. |
S |
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VSD |
Diode Forward Voltage1 |
- 2 |
V |
TC = 25 C, IS = -30 A, VGS = 0 |
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trr |
Reverse Recovery Time |
350 |
ns |
TJ = 150 C, IF = IS, |
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dlF/ds = 100 A/ms |
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1 Pulse Test: Pulse Width 300msec, Duty Cycle |
2%. |
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OM6020SA - OM6017SA
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