OMNIREL OMH410 Datasheet
2.1 - 33
2.1
OMH410
Dual 100 Volt, 15 To 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
4 11 R0
DU AL, LOW V OLTAGE, LOW R
DS(on)
, MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
FEATURES
• H-Bridge Configuration
• Zener Gate Protection
• 10 m Shunt Resistor
• 2 Linear Thermal Sensors, One For Each Bridge
• Isolated Package
• Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common V
DD
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
MAXIMUM RATINGS
(TC= @ 25°C)
Part V
DS
R
DS(on)
I
D
Package
Number (Volts) (m ) (Amps)
OMH410 100 58 15 MP-3
2.1 - 34
OMH410
2.1
ELECTRICAL CHARACTERISTICS: OMH410
(TC= 25° unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID= 250 µA, VGS= 0 V
(BR)DSS
100 - - V
Zero Gate Voltage Drain Current = V
GS
, VDS= Max. Rat. I
DSS
- - 10 µA
V
DS
= Max. Rat. x 0.8, TC= 70°C - - 100 µA
Gate-Body Leakage, V
GS
= ±12 V I
GSS
- - ±500 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS= VGS, ID= 250 µA V
GS(th)
2.0 - 4.0 V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, ID= 9.0 A R
DS(on)
- - 0.058
Static Drain-Source On-Resistance T
C
= 70°C - - 0.1
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., VGS= 10 V I
D(on)
15--A
DYNAMIC CHARACTERISTICS
Forward Transconductance, VDS> I
D(on)
X R
DS(on)
Max., ID= 9.0A g
fs
9.0 - - mho
Input Capacitance V
DS
= 25 V, C
iss
- - 2600 pF
Output Capacitance V
GS
= 0, C
oss
- - 910 pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- - 350 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
d(on)
- - 35 ns
Rise Time V
DD
= 100 V, ID= 15 A, t
r
- - 290 ns
Turn-Off Delay Time R
GS
= 10 , VGS= 10 V t
d(off)
- - 85 ns
Fall Time t
f
- - 120 ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current I
SD
--14A
Source - Drain Current Pulsed I
SDM
* - -56A
Forward On-Voltage, I
SD
= 28 A, VGS= 0 V
SD
- - 2.5 V
Reverse Recovery Time
I
SD
= 13 A, di/dt = 100 A/µSec
t
rr
- 133 - ns
Reverse Recovered Charge Q
rr
- 0.85 - µC
RESISTOR CHARACTERISTICS
Resistor Tolerance R
S
9.0 10 11 m
Temperature Coefficient, -40°C to +70°C T
cr
- 100 - ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
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