Preliminary Data Sheet
OM60L60HB OM45L120HB OM50F60HB OM35F120HB
HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES
High Current, High Voltage 600V And 1200V,
Up To 75 Amp IGBTs With FRED Diodes,
Half-Bridge Configuration
FEATURES
•Includes Internal FRED Diode
•Rugged Package Design
•Solder Terminals
•Very Low Saturation Voltage
•Fast Switching, Low Drive Current
•Available Screened To MIL-S-19500, TX, TXV And S Levels
•Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
GENERAL CHARACTERISTICS @ 25°C (Per Switch)
Part |
VCE |
IC |
VCE(sat) |
Type |
3.1 |
Number |
(V) |
(A) |
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OM60L60HB |
600 |
75 |
1.8 Volts |
Lo Sat. |
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OM45L120HB |
1200 |
70 |
3 Volts |
Lo Sat. |
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OM50F60HB |
600 |
75 |
2.7 Volts |
Hi Speed |
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OM35F120HB |
1200 |
70 |
4 Volts |
Hi Speed |
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SCHEMATIC |
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C1 |
G1 |
C2 E1 |
G2 |
E2 |
4 11 R0 |
3.1 - 55 |
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OM60L60HB OM45L120HB OM50F60HB OM35F120HB
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ELECTRICAL CHARACTERISTICS: |
OM60L60HB (TC = 25°C unless otherwise specified) |
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Characteristic |
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Symbol |
Min. |
Typ. |
Max. |
Unit |
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OFF CHARACTERISTICS |
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Collector Emitter Breakdown Voltage, IC = 250 µA, VCE = 0 |
V(BR)CES |
600 |
- |
- |
V |
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Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. |
ICES |
- |
- |
0.25 |
mA |
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VCE = 0.8 Max. Rat., VGE = 0, TC = 125°C |
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- |
- |
1.0 |
mA |
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Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V |
IGES |
- |
- |
±100 |
nA |
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ON CHARACTERISTICS |
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Gate-Threshold Voltage, VCE = VGE, IC = 250 µA |
VGE(th) |
2.5 |
- |
5.0 |
V |
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Collector Emitter saturation Voltage, VGE = 15 V, IC = 60 A |
VCE(sat) |
- |
- |
1.8 |
V |
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DYNAMIC CHARACTERISTICS |
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Forward Transconductance |
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VCE = 10 V, IC = 60 A |
gfs |
30 |
- |
- |
S |
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Input Capacitance |
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VGE = 0, |
Ciss |
- |
4000 |
- |
pF |
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Output Capacitance |
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VCE = 25 V, |
Coss |
- |
340 |
- |
pF |
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Reverse Transfer Capacitance |
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f = 1.0 mHz |
Crss |
- |
100 |
- |
pF |
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SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS |
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Turn-On Delay Time |
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td(on) |
- |
50 |
- |
nS |
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Rise Time |
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VCC = 480 V, IC = 60 A, |
tr |
- |
200 |
- |
nS |
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Turn-Off Delay Time |
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RGS = 2.7 , VGS = 15 V, |
td(off) |
- |
600 |
- |
nS |
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Fall Time |
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L = 100 µH |
tf |
- |
500 |
- |
nS |
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SWITCHING-INDUCTIVE LOAD CHARACTERISTICS |
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Turn-On Delay Time |
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VCE(clamp) = 480 V, IC = 60 A |
td(on) |
- |
1000 |
- |
nS |
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Fall Time |
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VGE = 15 V, Rg = 2.7 |
tf |
- |
1000 |
- |
nS |
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Turn-Off Losses |
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L = 100 µH, Tj = 125°C |
E(OFF) |
- |
26 |
- |
m Ws |
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SOURCE DRAIN DIODE CHARACTERISTICS |
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Maximum Forward Voltage |
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IF = 60 A, Tj = 25°C |
Vf |
- |
- |
1.85 |
V |
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IF = 60 A, Tj = 150°C |
- |
- |
1.50 |
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Maximum Reverse Current |
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VR = 600 V, Tj = 25°C |
Ir |
- |
- |
200 |
µA |
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VR = 480 V, Tj = 125°C |
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- |
- |
14 |
mA |
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Reverse Recovery Time |
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IF = 1 A, di/dt = 200 A µ/S |
trr |
- |
- |
50 |
nS |
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VR = 30 V, Tj = 25°C |
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ELECTRICAL CHARACTERISTICS: |
OM45L120HB (TC = 25°C unless otherwise specified) |
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Characteristic |
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Symbol |
Min. |
Typ. |
Max. |
Unit |
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OFF CHARACTERISTICS |
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Collector Emitter Breakdown Voltage, IC = 3 mA, VCE = 0 |
V(BR)CES |
1200 |
- |
- |
V |
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Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. |
ICES |
- |
- |
3.0 |
mA |
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VCE = 0.8 Max. Rat., VGE = 0, Tj = 125°C |
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- |
- |
1.2 |
mA |
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Gate Emitter Leakage Current, VGE = ±20 V, VCE = 0 V |
IGES |
- |
- |
±100 |
nA |
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3.1 |
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ON CHARACTERISTICS |
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Gate-Threshold Voltage, VCE = VGE, IC = 4 mA |
VGE(th) |
4.0 |
- |
8.0 |
V |
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Collector Emitter saturation Voltage, VGE = 15 V, IC = 45 A |
VCE(sat) |
- |
- |
3.0 |
V |
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DYNAMIC CHARACTERISTICS |
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Forward Transconductance |
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VCE = 10 V, IC = 45 A |
gfs |
26 |
- |
- |
S |
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Input Capacitance |
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VGE = 0, |
Ciss |
- |
4200 |
- |
pF |
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Output Capacitance |
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VCE = 25 V, |
Coss |
- |
290 |
- |
pF |
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Reverse Transfer Capacitance |
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f = 1.0 mHz |
Crss |
- |
65 |
- |
pF |
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SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS |
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Turn-On Delay Time |
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td(on) |
- |
80 |
- |
nS |
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Rise Time |
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VCC = 960 V, IC = 45 A, |
tr |
- |
250 |
- |
nS |
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Turn-Off Delay Time |
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RGS = 2.7 , VGS = 15 V, |
td(off) |
- |
450 |
- |
nS |
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Fall Time |
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L = 100 µH |
tf |
- |
1200 |
- |
nS |
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SWITCHING-INDUCTIVE LOAD CHARACTERISTICS |
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Turn-On Delay Time |
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VCE(clamp) = 960 V, IC = 45 A |
td(on) |
- |
450 |
- |
nS |
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Fall Time |
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VGE = 15 V, Rg = 2.7 |
tf |
- |
1200 |
- |
nS |
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Turn-Off Losses |
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L = 100 µH, Tj = 125°C |
E(OFF) |
- |
27 |
- |
m Ws |
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SOURCE DRAIN DIODE CHARACTERISTICS |
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Maximum Forward Voltage |
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IF = 52 A, Tj = 25°C |
Vf |
- |
- |
2.55 |
V |
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IF = 52 A, Tj = 150°C |
- |
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2.15 |
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Maximum Reverse Current |
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VR = 1200 V, Tj = 25°C |
Ir |
- |
- |
2.2 |
mA |
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VR = 960 V, Tj = 125°C |
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- |
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14 |
mA |
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Reverse Recovery Time |
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IF = 1 A, di/dt = 200 A µ/S |
trr |
- |
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60 |
nS |
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VR = 30 V, Tj = 25°C |
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3.1 - 56