OMNIREL OM60N05SA, OM60N06SA, OM50N06SA, OM50N05ST, OM50N05SA Datasheet
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OM60N06SA
OM50N06SA
OM60N05SA
OM50N05SA
OM50N06ST
OM50N05ST
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V And 60V Ultra Low R
Power MOSFETs In TO-257 And TO-254
Isolated Packages
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low R
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs Available
DS(on)
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate charge simpler drive circuitry.
DS(on)
MAXIMUM RATINGS (Per Device)
PART NO. VDS(V) R
OM60N06SA 60 .025 60 TO-254AA
OM50N06SA 60 .030 50 TO-254AA
OM50N06ST 60 .035 50 TO-257AA
OM60N05SA 50 .025 60 TO-254AA
OM50N05SA 50 .030 50 TO-254AA
OM50N05ST 50 .035 50 TO-257AA
SCHEMATIC T-3 PIN
Drain
Gate
Source
() ID(A) Package
DS(on)
CONNECTION
123
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
CONNECTION
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
M-PAK PIN
3.1
123
4 11 R1
Supersedes 3 02 R0
3.1 - 65
OM60N06SA - OM50N05ST
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
Parameter 60N06SA
V
DS
V
DGR
Drain-Source Voltage 60 60 50 50 V
Drain-Gate Voltage (RGS= 1 M ) 60 60 50 50 V
ID@ TC= 25°C Continuous Drain Current
ID@ TC= 100°C Continuous Drain Current
I
DM
Pulsed Drain Current
PD@ TC= 25°C Maximum Power Dissipation 100 100 100 100 W
PD@ TC= 100°C Maximum Power Dissipation 40 40 40 40 W
Junction-To-Case Linear Derating Factor
T
J
T
stg
Operating and
Storage Temperature Range
Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited SA I
= 25 A, SC SC ID= 35 A @ 25 C
D
THERMAL RESISTANCE
R
Junction-to-Case 1.25 °C/W
thJC
PACKAGE LIMITATIONS
Parameters TO254AA TO-257AA Unit
I
Continuous Drain Current 25 15 A
D
Linear Derating Factor, Junction-to-Ambient .020 .015 W/°C
R
Thermal Resistance, Junction-to-Ambient (Free Air Operation) 50 65 °C/W
thJA
Linear Derating, Junction-to-Case 0.8 0.8 W/°C
50N06ST 50N05ST
50N05SA
2
2
1
1
55 50 55 50 A
37 33 37 33 A
220 200 220 200 A
.80 .80 .80 .80 W/°C
60N05SA
50N05SA
Units
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
3.1
PACKAGE OPTIONS
T-3 MECHANICAL OUTLINE
Notes:
• Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the
part number. Example - OMXXXXCSA.
• MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
M-PAK MECHANICAL OUTLINE
MOD PAK
Z-TAB
6 PIN SIP
3.1 - 66
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