OMNIREL OM60N05SA, OM60N06SA, OM50N06SA, OM50N05ST, OM50N05SA Datasheet

OM60N06SA OM60N05SA OM50N06ST

OM50N06SA OM50N05SA OM50N05ST

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

50V And 60V Ultra Low RDS(on)

Power MOSFETs In TO-257 And TO-254

Isolated Packages

FEATURES

•Isolated Hermetic Metal Packages

•Ultra Low RDS(on)

•Low Conductive Loss/Low Gate Charge

•Available Screened To MIL-S-19500, TX, TXV And S Levels

•Ceramic Feedthroughs Available

DESCRIPTION

This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler drive circuitry.

MAXIMUM RATINGS (Per Device)

PART NO.	VDS (V)	RDS(on) ( )	ID (A)	Package
OM60N06SA	60	.025	60	TO-254AA
OM50N06SA	60	.030	50	TO-254AA
OM50N06ST	60	.035	50	TO-257AA		3.1
OM60N05SA	50	.025	60	TO-254AA
OM50N05SA	50	.030	50	TO-254AA
OM50N05ST	50	.035	50	TO-257AA

SCHEMATIC			T-3 PIN	M-PAK PIN
Drain			CONNECTION	CONNECTION

Gate

Source

1		2		3
						1		2		3
Pin 1: Drain
						Pin 1: Drain
Pin 2: Source						Pin 2: Source
Pin 3: Gate						Pin 3: Gate

4 11 R1	3.1 - 65
Supersedes 3 02 R0

OM60N06SA - OM50N05ST

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

		Parameter	60N06SA	50N06ST			60N05SA			50N05ST		Units
				50N05SA						50N05SA
VDS		Drain-Source Voltage	60	60			50				50		V
VDGR		Drain-Gate Voltage (RGS = 1 M )	60	60			50				50		V
ID @ TC = 25°C		Continuous Drain Current 2	55	50			55				50		A
ID @ TC = 100°C		Continuous Drain Current 2	37	33			37				33		A
IDM		Pulsed Drain Current1	220	200			220				200		A
PD @ TC = 25°C		Maximum Power Dissipation	100	100			100				100	W
PD @ TC = 100°C		Maximum Power Dissipation	40	40			40				40	W
Junction-To-Case		Linear Derating Factor1	.80	.80			.80				.80	W/°C
TJ		Operating and	-55 to 150	-55 to 150			-55 to 150			-55 to 150		°C
Tstg		Storage Temperature Range
Lead Temperature		(1/16" from case for 10 secs.)	300	300			300				300	°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited SA ID = 25 A, SC SC I D = 35 A @ 25 C
THERMAL RESISTANCE
RthJC	Junction-to-Case				1.25						°C/W
PACKAGE LIMITATIONS
	Parameters				TO254AA			TO-257AA			Unit
ID	Continuous Drain Current				25			15			A
	Linear Derating Factor, Junction-to-Ambient				.020			.015			W/°C
RthJA	Thermal Resistance, Junction-to-Ambient (Free Air Operation)				50			65			°C/W
	Linear Derating, Junction-to-Case				0.8			0.8			W/°C

3.1	PACKAGE OPTIONS

T-3 MECHANICAL OUTLINE																						M-PAK MECHANICAL OUTLINE
															.200
				.420											.190														.545																	.050
				.410																		.144 DIA.							.535
																			.045																											.040
																			.035
.150											.665
											.645
																																			.800
																							.685
.140								.537																												.790
																							.665																	.550
															.430
								.527																															.530
															.410
																			.038 MAX.
								.750									.005																			.550										.005
								.500																												.510
																								.045																							.150 TYP.
																								.035															.260
																																		.150 TYP.
								.100 TYP.												.120 TYP.																			.249
	.035
	.025

Notes:

•Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.

•MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.

MOD PAK

Z-TAB

6 PIN SIP

3.1 - 66