OMNIREL OM6503SC, OM6504SC, OM6503ST Datasheet

OM6503SC

OM6504SC

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE

500 Volt, 20 And 30 Amp, N-Channel IGBT

In A Hermetic Metal Package

FEATURES

•Isolated Hermetic Metal Package

•High Input Impedance

•Low On-Voltage

•High Current Capability

•Fast Turn-Off

•Low Conductive Losses

•Available Screened to MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.

MAXIMUM RATINGS @ 25°C Unless Specified Otherwise

PART				IC (Cont.)		V(BR)CES	VCE (sat) (Typ.)							Tf (Typ.)												qJC														PD							TJ
NUMBER			@ 90°C, A			V	V									ns										°C/W													W								°C
OM6503SC			20			500	2.8							400											1.75									72												150
OM6504SC			30			500	2.8							400											1.00									125												150
																																																	3.1
	SCHEMATIC									MECHANICAL OUTLINE
		Collector																																		.270
																																					.240
							.165										.695
																	.685																											.045
							.155
																																												.035
																										.835
																										.815
									.707
									.697																					.550
Gate														1			2							3						.530
						Pin 1: Collector									C			E						G
						Pin 2: Emitter		.750																																				.092 MAX.
		Emitter				Pin 3: Gate
								.500																																				.005
																																.065
								.200 TYP.																								.055
																												.140 TYP.

PACKAGE OPTIONS

Note: IGBTs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.

MOD PAK

6 PIN SIP

4 11 R2	3.1 - 141
Supersedes 2 07 R1