OMNIREL OM6516SC, OM6520SC Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

.707
.697

.750
.500

.835
.815

.695
.685

.165
.155

.200 TYP.

.550
.530

.270
.240

.045
.035

.140 TYP.

.092 MAX.

.065
.055

.005

(IGBT) IN A HERMETIC TO-258AA PACKAGE

1000 Volt, 25 Amp, N-Channel IGBT
In A Hermetic Metal Package

FEATURES

• Isolated IGBTs In A Hermetic Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• High Switching Speed

• Low Tail Current

• Available With Free Wheeling Diode

• Available Screened To MIL-S-19500, TX, TXV And S Levels

OM6516SC
OM6520SC

4 11 R2
Supersedes 2 07 R1

DESCRIPTION

This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.

MAXIMUM RATINGS @ 25°C Unless Specified Otherwise

123
CEG

6 PIN SIP

qq

JC

P

D

PART IC (Cont.) V

(BR)CES

V

(Typ.) Tf(Typ.)

CE (sat)

NUMBER @ 90°C, A V V ns °C/W W °C

OM6516SC 25 1000 4.0 300 1.0 125 150
OM6520SC 25 1000 4.0 300 1.0 125 150

SCHEMATICS

Collector

Gate

Emitter

OM6516SC OM6520SC(w/Diode)

MOD PAK

Gate

Collector

Emitter

NOTE: IGBTs are also available in Z-Tab, dual and quad

pak styles - Please call the factory for more information.

PACKAGE OPTIONS

3.1 - 155

MECHANICAL OUTLINE

T

J

3.1