OM6508SA
OM6509SA
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
500 Volt, 5 And 10 Amp, N-Channel IGBT
With a Soft Recovery Diode
In A Hermetic Metal Package
FEATURES
•Isolated Hermetic Metal Package
•High Input Impedance
•Low On-Voltage
•High Current Capability
•Fast Turn-Off
•Low Conductive Losses
•Available Screened To MIL-S-19500, TX, TXV And S Levels
•Free Wheeling Diode
•Ceramic Feedthroughs Available
DESCRIPTION
This power module includes an IGBT power transistor which features a high impedance insulated gate and the low on-resistance characteristics of bipolar transistor with a free wheeling diode connected across the emitter and collector. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
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3.1 |
PART |
IC (Cont.) |
V(BR)CES |
VCE (sat) (Typ.) |
Tf (Typ.) |
qJC |
PD |
TJ |
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NUMBER |
@ 90°C, A |
V |
V |
ns |
°C/W |
W |
°C |
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OM6508SA |
5 |
500 |
2.8 |
400 |
3.8 |
35 |
150 |
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OM6509SA |
10 |
500 |
2.8 |
400 |
3.0 |
42 |
150 |
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SCHEMATIC |
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MECHANICAL OUTLINE |
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Collector 
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.545 |
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.050 |
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.144 DIA. |
.535 |
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.040 |
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.800 |
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.685 |
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.665 |
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.790 |
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.550 |
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.530 |
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1 |
2 |
3 |
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C |
E |
G |
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Gate |
PIN CONNECTION |
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Pin 1: |
Collector |
.550 |
.005 |
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Pin 2: |
Emitter |
.510 |
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Pin 3: |
Gate |
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.045 |
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.150 TYP. |
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Emitter |
.035 |
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.260 |
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.150 TYP. |
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.249 |
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PACKAGE OPTIONS |
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MOD PAK |
Z-TAB |
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6 PIN SIP |
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2 |
3.1 - 147 |
Supersedes 2 07 R1 |
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