OM6025SA
OM6026SA
POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE
400V, 500V, N-Channel, Up To 24 Amp
Size 6 MOSFETs, High Energy Capability
FEATURES
•Isolated Hermetic Metal Package
•Size 6 Die, High Energy
•Fast Switching, Low Drive Current
•Ease of Paralleling For Added Power
•Low RDS(on)
•Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER |
VDS |
RDS(on) |
ID (Amp) |
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3.1 |
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OM6025SA |
400 |
.23 |
24 |
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OM6026SA |
500 |
.30 |
22 |
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SCHEMATIC
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4 11 R0 |
3.1 - 93 |
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OM6025SA - OM6026SA
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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Parameter |
OM6025SA |
OM6026SA |
Units |
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VDS |
Drain-Source Voltage |
400 |
500 |
V |
VDGR |
Drain-Gate Voltage (RGS = 1 M ) |
400 |
500 |
V |
ID @ TC = 25°C |
Continuous Drain Current 2 |
24 |
22 |
A |
IDM |
Pulsed Drain Current2 |
92 |
85 |
A |
PD @ TC = 25°C |
Maximum Power Dissipation |
165 |
165 |
W |
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Derate Above 25°C Ambient |
.025 |
.025 |
W/°C |
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WDSS (1) (2) |
Single Pulse Energy |
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Drain To Source @ 25°C |
1000 |
1200 |
mJ |
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TJ |
Operating and |
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Tstg |
Storage Temperature Range |
-55 to 150 |
-55 to 150 |
°C |
Lead Temperature |
(1/8" from case for 5 secs.) |
275 |
275 |
°C |
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Note 1: VDD = 50V, ID = as noted
Note 2: Package Pin Limitation ID @ TC = 25°C = 25 Amps
THERMAL RESISTANCE (MAXIMUM) at TA = 25°C
RthJC |
Junction-to-Case |
.76 |
°C/W |
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RthJA |
Junction-to-Ambient |
40 |
°C/W |
Free Air Operation |
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Derate Above 25°C Case |
1.32 |
W/°C |
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3.1
3.1 - 94
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