Motorola 1N827A, 1N829A, 1N827, 1N829, 1N825A Datasheet
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MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-Compensated
Zener Reference Diodes
Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure.
Mechanical Characteristics:
CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band.
WEIGHT: 0.2 Gram (approx.)
MOUNTING POSITION: Any
Maximum Ratings
Junction Temperature: ± 55 to +175°C
Storage Temperature: ± 65 to +175°C
DC Power Dissipation: 400 mW @ TA = 50°C
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Phoenix, Arizona
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW
CASE 299
DO-204AH
GLASS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. VZ = 6.2 V ± 5%* @ IZT = 7.5 mA) (Note 5)
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Temperature |
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|
Maximum |
Ambient |
Coefficient |
Maximum |
|
Voltage Change |
Test Temperature |
For Reference Only |
Dynamic Impedance |
JEDEC |
VZ (Volts) |
°C |
%/°C |
ZZT Ohms |
Type No. |
(Note 1) |
±1°C |
(Note 1) |
(Note 2) |
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|
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1N821 |
0.096 |
± 55, 0, +25, +75, +100 |
0.01 |
15 |
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|
|
|
|
1N823 |
0.048 |
|
0.005 |
|
|
|
|
|
|
1N825 |
0.019 |
|
0.002 |
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|
|
|
|
|
1N827 |
0.009 |
|
0.001 |
|
|
|
|
|
|
1N829 |
0.005 |
|
0.0005 |
|
|
|
|
|
|
1N821A |
0.096 |
|
0.01 |
10 |
|
|
|
|
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1N823A |
0.048 |
|
0.005 |
|
|
|
|
|
|
1N825A |
0.019 |
|
0.002 |
|
|
|
|
|
|
1N827A |
0.009 |
|
0.001 |
|
|
|
|
|
|
1N829A |
0.005 |
|
0.0005 |
|
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|
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*Tighter-tolerance units available on special request.
Motorola TVS/Zener Device Data |
6.2 Volt OTC 400 mW DO-35 Data Sheet |
|
8-1 |
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