HIT 4AK23 Datasheet
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
0.25 , VGS = 10 V, ID = 2.5 A
DS(on)
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
4AK23
Outline
SP-12TA
1
2
1
G
D
S 3
5
G
4
D
8
G
S 6 S 7 S 10
9
D
12
G
11
D
2
3
4
5
6
7
8
9
10
11
12
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
4AK23
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch (Tc = 25°C)*232 W
Channel dissipation Pch*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
100 V
±20 V
5A
20 A
5A
4W
2
Loading...