HIT 4AK22 Datasheet
4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
0.4 , VGS = 10 V, ID = 1.5 A
DS(on)
R
0.55 , VGS = 4 V, ID = 1.5 A
DS(on)
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S)
4AK22
Outline
SP-10
3
D
4
2 G
1 S
G
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
5
D
6
G
7
D
8
G
1
2
9
D
S 10
3
4
5
6
7
8
9
1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
10
Item Symbol Rating Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
120 V
±20 V
3A
12 A
3A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*
2
4W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation
2
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