HIT 4AK19 Datasheet

Features

• Low on-resistance

N Channel: R

≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A

DS(on)

R

≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A

DS(on)

• 4 V gate drive devices.

• High density mounting

Outline

4AK19

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-727 (Z)

1st. Edition

February 1999

SP-10

G

2

1

1

2

3

10

4

5

6

7

8

9

10

1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain

3
D

4

G

S

5
D

6

G

7
D

8

G

9
D

S

4AK19

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

Note1

Channel dissipation Pch(Tc = 25°C)
Channel dissipation Pch

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 4 devices poeration

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

R

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Forward transfer admittance |yfs|35—SI
Input capacitance Ciss — 25 — pF VDS = 10 V
Output capacitance Coss — 140 — pF VGS = 0
Reverse transfer capacitance Crss — 3 — pF f = 1 MHz
Gate series resistance Rg — 2.5 — kΩ VDS = 0, VGS = 0, f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

120 — — V ID = 10 mA, VGS = 0
±20——V I
— — 100 µAVDS = 100 V, VGS = 0
——±10 µAVGS = ±16 V, VDS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.3 0.5 Ω ID = 2.5 A, VGS = 10 V

— 0.35 0.6 Ω ID = 2.5 A, VGS = 4 V

— 0.3 — µsVGS = 10 V, ID = 2.5 A
— 0.45 — µsR
— 6.6 — µs
— 1.4 — µs
— 1.1 — V IF = 5 A, VGS = 0
— 600 — ns IF = 5 A, VGS = 0

120 V
±20 V
5A
10 A
5A

Note2

28 W

3.5 W

= ±100 µA, VDS = 0

G

= 2.5 A, VDS = 10 V

D

= 12 Ω

L

diF/ dt = 50A/ µs

Note3

Note3

Note3

2

Main Characteristics

4AK19

Maximum Channel Dissipation Curve

8

Condition : Channel dissipation of

each die is idetical

6

4 Device Operation

4

3 Device Operation
2 Device Operation
1 Device Operation

2

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

50
20

10

D

5

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

100 µs

1 ms

2
1

0.5

Operation in

Drain Current I (A)

this area is

0.2

limited by R

DS(on)

0.1
Ta = 25 °C

0.05
1 3 10 30 100 300 1000

Drain to Source Voltage V (V)

DS

Maximum Channel Dissipation Curve

46

Condition : Channel dissipation of

each die is idetical

32

4 Device Operation

28

3 Device Operation
2 Device Operation
1 Device Operation

14

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

5

10 V

4 V

4

D

3

2

2.5 V

Drain Current I (A)

1

V = 2 V

GS

0

4 8 12 16 20

Drain to Source Voltage V (V)

Pulse Test

3 V

DS

3