HIT 4AK17 Datasheet
4AK17
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
≤ 0.045 , VGS = 10 V, ID = 10 A
DS(on)
R
≤ 0.065 , VGS = 4 V, ID = 10 A
DS(on)
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
4AK17
Outline
SP-10
3
D
4
2 G
1 S
G
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
5
D
6
G
7
D
8
G
1
2
9
D
S 10
3
4
5
6
7
8
9
1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
10
Item Symbol Rating Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
60 V
±20 V
10 A
40 A
10 A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*
2
4W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation
2
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs|1017—SI
Input capacitance Ciss — 1400 — pF VDS = 10 V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 220 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
60 — — V ID = 10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.033 0.045 Ω ID = 10 A
V
= 10 V*
GS
— 0.04 0.065 Ω ID = 10 A
V
= 4 V*
GS
= 10 A
D
V
= 10 V*
DS
1
1
1
— 15 — ns ID = 10 A
— 95 — ns VGS = 10 V
— 300 — ns RL = 3 Ω
— 170 — ns
— 1.05 — V IF = 10 A, VGS = 0
— 110 — ns IF = 10 A, VGS = 0
dIF/dt = 50 A/µs
4AK17
3
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