HIT 4AJ11 Datasheet
4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
0.13 , VGS = –10 V, ID = –4 A
DS(on)
R
0.17 , VGS = –4 V, ID = –4 A
DS(on)
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
4AJ11
Outline
SP-12
2
1
G
D
S 3
5
G
Absolute Maximum Ratings (Ta = 25°C)
4
D
8
G
S 6 S 7 S 10
9
D
12
1
2
3
11
D
G
4
5
6
7
8
9
10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
11
12
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
–60 V
±20 V
–8 A
–32 A
–8 A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*
2
4W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
2
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