HIT 4AC12 Datasheet
Application
Low frequency power amplifier
Outline
SP-10
4AC12
Silicon NPN Epitaxial
1
1, 10 Emitter
2, 4, 6, 8 Base
3, 5, 7, 9 Collector
10
3
2
1
6
7
4
I
D
8
I
D
5
I
D
9
I
D
10
4AC12
Absolute Maximum Ratings (for each device, Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Diode current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
D
1
1
P
*
(TC = 25°C) 28
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. 4 devices operation.
Electrical Characteristics (for each device, Ta = 25°C)
27 V
27 V
7V
2A
4A
2A
4W
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CBO
27 — — V IC = 1 mA, IE = 0
voltage
Collector to emitter sustain
V
CEO(SUS)
28 — 36 V IC = 1 A, L = 20 mH, RBE = ∞
voltage
Emitter to base breakdown
V
(BR)EBO
7——VI
= 5 mA, IC = 0
E
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
I
h
V
CBO
CEO
FE
FE
CE(sat)
——10µAVCB = 20 V, IE = 0
— — 10 VCE = 20 V, RBE = ∞
7000 — 30000 VCE = 2 V, IC = 0.5 A
2000 — — VCE = 2 V, IC = 2 A*
— — 1.5 V IC = 2 A, IB = 2 mA*
voltage
Base to emitter saturation
V
BE(sat)
— — 2.0 V IC = 2 A, IB = 2 mA*
voltage
C to E diode forward current V
D
— — 3.5 V ID = 2 A
Note: 1. Pulse test.
1
1
1
2
Maximum Collector Dissipation Curve
6
(W)
C
4 device operation
3 device operation
4
2 device operation
1 device operation
2
Maximum Collector Dissipation Curve
30
4 device operation
(W)
C
20
3 device operation
2 device operation
4AC12
Collector power dissipation P
0 50 100 150
Ambient temperature Ta (°C)
Note: Collector power dissipation of each devices
is identical.
Area of Safe Operation
10
i
(A)
C
3.0
1.0
C(peak)
I
C(max)
DC Operation
(T
C
= 25°C)
1 ms
PW = 10 ms
0.3
0.1
Collector current I
0.03
Ta = 25°C
1 shot pulse
0.01
1.0 50100.5 2 205
Collector to emitter voltage V
CE
(V)
10
Collector power dissipation P
1 device operation
0 50 100 150
Case temperature T
(°C)
C
Typical Output Characteristics
(A)
C
2.0
1.6
90
80
70
60
50
40
1.2
0.8
30 µA
Collector current I
0.4
TC = 25°C
I
= 0
B
01 4325
Collector to emitter voltage VCE (V)
3
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