HIT 4AC12 Datasheet

Application

Low frequency power amplifier

Outline

SP-10

4AC12

Silicon NPN Epitaxial

1

1, 10 Emitter
2, 4, 6, 8 Base
3, 5, 7, 9 Collector

10

3

2

1

6

7

4

I

D

8

I

D

5

I

D

9

I

D

10

4AC12

Absolute Maximum Ratings (for each device, Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Diode current I
Collector power dissipation PC*

CBO

CEO

EBO

C

C(peak)

D

1

1

P

*

(TC = 25°C) 28

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. 4 devices operation.

Electrical Characteristics (for each device, Ta = 25°C)

27 V
27 V
7V
2A
4A
2A
4W

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown

V

(BR)CBO

27 — — V IC = 1 mA, IE = 0

voltage
Collector to emitter sustain

V

CEO(SUS)

28 — 36 V IC = 1 A, L = 20 mH, RBE = ∞

voltage
Emitter to base breakdown

V

(BR)EBO

7——VI

= 5 mA, IC = 0

E

voltage
Collector cutoff current I

DC current transfer ratio h

Collector to emitter saturation

I

h
V

CBO

CEO

FE

FE

CE(sat)

——10µAVCB = 20 V, IE = 0
— — 10 VCE = 20 V, RBE = ∞
7000 — 30000 VCE = 2 V, IC = 0.5 A
2000 — — VCE = 2 V, IC = 2 A*
— — 1.5 V IC = 2 A, IB = 2 mA*

voltage
Base to emitter saturation

V

BE(sat)

— — 2.0 V IC = 2 A, IB = 2 mA*

voltage
C to E diode forward current V

D

— — 3.5 V ID = 2 A

Note: 1. Pulse test.

1

1

1

2

Maximum Collector Dissipation Curve

6

(W)

C

4 device operation
3 device operation

4

2 device operation

1 device operation

2

Maximum Collector Dissipation Curve

30

4 device operation

(W)

C

20

3 device operation

2 device operation

4AC12

Collector power dissipation P

0 50 100 150

Ambient temperature Ta (°C)

Note: Collector power dissipation of each devices

is identical.

Area of Safe Operation

10

i

(A)

C

3.0

1.0

C(peak)

I

C(max)

DC Operation

(T

C

= 25°C)

1 ms

PW = 10 ms

0.3

0.1

Collector current I

0.03

Ta = 25°C
1 shot pulse

0.01

1.0 50100.5 2 205

Collector to emitter voltage V

CE

(V)

10

Collector power dissipation P

1 device operation

0 50 100 150

Case temperature T

(°C)

C

Typical Output Characteristics

(A)

C

2.0

1.6

90

80

70

60

50

40

1.2

0.8

30 µA

Collector current I

0.4
TC = 25°C

I

= 0

B

01 4325

Collector to emitter voltage VCE (V)

3

4AC12

DC Current Transfer Ratio

vs. Collector Current

100,000

FE

30,000

10,000

Ta = 75°C

3,000

1,000

300

DC current transfer ratio h

–25°C

100

0.03 0.1 1.0
Collector current I

Base to Emitter Saturatiion Voltage

vs. Collector Current

10

(V)

BE(sat)

Ta = –25°C

3.0

1.0

25°C

VCE = 2 V

0.3 3.0
(A)

C

25°C

75°C

Collector to Emitter Saturatiion Voltage

vs. Collector Current

10

(V)

CE(sat)

3

Ta = –25°C

25°C

75°C

1.0

0.3
IC = 1000 I

0.1

0.03 0.3

Collector to emitter saturation voltage V

Collector current IC (A)

Typical Transfer Characteristics

2.0

1.6

(A)

C

1.2

0.8

VCE = 2 V

Ta = 75°C

25°C

–25°C

B

1.00.1 3.0

0.3

IC = 1000 I

0.1

Base to emitter saturation voltage V

0.03 0.3
Collector current IC (A)

B

1.00.1 3.0

Collector current I

0.4

0 0.4 0.8

Base to emitter voltage V

1.2 2.01.6

BE

(V)

4

Zener Voltage vs. Case Temperature

60

4AC12

Transient Thermal Resistance

10

50

(V)

Z

40

30

Zener voltage V

20

10

0 25 75 125

50 100

Case temperature TC (°C)

IC = 1 mA

26.5 ± 0.3

(°C/W)

j-c

1.0

0.1

Thermal resistance θ

0.02

0.01 0.1 1.0 10 (s)

0.01 0.1 1.0 10 (ms)

10 ms to 10 s

10 µs to 10 ms

TC = 25°C

Time t

4.0 ± 0.2

10.0 ± 0.310.5 ± 0.5

2.5

1.5 ± 0.2

110

1.82 2.54 1.4

1234

Pin No.

56

1E2B3C4B5C6B7C8B9C10

1.2 0.55

8910

7

0.55 ± 0.1

Electrode
Note: B:

C:
E:

Base
Collector
Emitter

E

5

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

0.55

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

+0.1
–0.06

SP-10
—
—

2.9 g

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