HIT 3SK321 Datasheet

3SK321

Silicon N-Channel Dual Gate MOS FET

Application

UHF RF amplifier

Features

• Low noise figure.

NF = 2.0 dB typ. at f = 900 MHz

• Capable of low voltage operation

• Provide mini mold packages; MPAK-4R(SOT-143 var.)

ADE-208-711A (Z)

2nd. Edition

Dec. 1998

Outline

MPAK-4R

3

4

2

1

1. Source

2. Drain

3. Gate2

4. Gate1

3SK321

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSX

voltage
Gate 1 to source breakdown

V

(BR)G1SS

voltage
Gate 2 to source breakdown

V

(BR) G2SS

voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Drain current I

Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

G1SS

G2SS

DS(on)

G1S(off)

G2S(off)

Forward transfer admittance |yfs| 16 20.8 — mS V

Input capacitance Ciss 1.2 1.5 2.2 pF V

Output capacitance Coss 0.6 0.9 1.2 pF
Reverse transfer capacitance Crss — 0.01 0.03 pF
Power gain PG 16 19.5 — dB V

Noise figure NF — 2.0 3 dB
Note: Marking is “ZX–”

12 — — V ID = 200 µA , V

±8— —V IG1 = ±10 µA, V

±8— —V IG2 = ±10 µA, V

——±100 nA V
——±100 nA V

0.5 — 10 mA V

–0.5 — +0.5 V V

0 — +1.0 V V

12 V

±8V
±8V

25 mA

V

= –3 V

G2S

= ±6 V, V

G1S

= ±6 V, V

G2S

= 6 V, V

DS

V

= 3 V

G2S

= 10 V, V

DS

I

= 100 µA

D

= 10 V, V

DS

I

= 100 µA

D

= 6 V, V

DS

I

= 10 mA, f = 1 kHz

D

= 6 V, V

DS

I

= 10 mA, f = 1 MHz

D

= 4 V, V

DS

I

= 10 mA, f = 900 MHz

D

G2S

G1S

= 0.5V,

G1S

G2S

G1S

= 3V,

G2S

= 3V,

G2S

= 3V,

G2S

= –3 V,

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0
= VDS = 0

= 3V,

= 3V,

2

Main Characteristics

900MHzPowerGain,NoiseTestCircuit

V

G1

3SK321

V

G2

V

D

Input

R1

L1

C1,C2

C4〜C6

C5C4

R2

C3

G2

G1

L2

：

VariableCapacitor（10pFMAX)

：

DiskCapacitor（1000pF)

C3

：

AirCapacitor（1000pF)

：

47kΩ

R1

：

47kΩ

R2

：

4.7kΩ

R3

R3

D

S

C6

L3

RFC

Output

L4

C2C1

L1：

L3：

L2：

10

8

10

3

26

（φ1mmCopperwire）

3

Unit：mm

21

L4：

18

29

7

7

10

10

RFC：φ1mmCopperwirewithenamel4turnsinsidedia6mm

3