HIT 3SK318 Datasheet
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics
• Capable low voltage operation; +B= 5V
Outline
3SK318
ADE-208-600(Z)
1st. Edition
February 1998
Note: Marking is “YB–”.
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK318
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate1 to source breakdown
V
(BR)G1SS
voltage
Gate2 to source breakdown
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
DS(op)
Forward transfer admittance |yfs|182432mSVDS = 3.5V, V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
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Power gain PG 18 21 — dB VDS = 3.5V, V
Noise figure NF — 1.4 2.2 dB ID = 10mA , f = 900MHz
6 ——V I
±6——V IG1 = ±10µA, V
±6——V IG2 = ±10µA, V
——±100 nA V
——±100 nA V
0.5 0.7 1.0 V VDS = 5V, V
0.5 0.7 1.0 V VDS = 5V, V
0.5 4 10 mA VDS = 3.5V, V
1.3 1.6 1.9 pF VDS = 3.5V, V
0.9 1.2 1.5 pF ID = 10mA , f= 1MHz
— 0.019 0.03 pF
6V
±6V
±6V
20 mA
= 200µA, V
D
= ±5V, V
G1S
= ±5V, V
G2S
I
= 100µA
D
I
= 100µA
D
V
= 3V
G2S
I
= 10mA , f = 1kHz
D
G2S
G1S
G1S
G2S
G1S
G2S
G1S
= 3V
= 3V
G1S
G2S
G2S
G2S
= V
G2S
= VDS = 0
= VDS = 0
= VDS = 0
= VDS = 0
= 1.1V
= 3V
= 3V
= 3V
= 0
2
Maximum Channel Power
Dissipation Curve
200
150
100
50
Channel Power Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
20
16
D
12
Drain Current I (mA)
Typical Output Characteristics
V = 1.7 V
G1S
1.6 V
1.5 V
1.4 V
8
4
0
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
246810
Drain to Source Voltage V (V)
3SK318
V = 3 V
G2S
0.8 V
DS
Drain Current vs.
Gate1 to Source Voltage
20
V = 3.5 V
DS
2.5 V
16
D
12
8
Drain Current I (mA)
4
0
12345
1.5 V
V = 1.0 V
G2S
Gate1 to Source Voltage V (V)
2.0 V
G1S
Drain Current vs.
Gate2 to Source Voltage
20
V = 3.5 V
DS
2.0 V
16
D
12
8
Drain Current I (mA)
4
0
12345
1.2 V
V = 1.0 V
G1S
Gate2 to Source Voltage V (V)
1.8 V
1.6 V
1.4 V
G2S
3
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