HIT 3SK300 Datasheet
Silicon N Channel Dual Gate MOS FET
Features
• Low noise figure
NF = 1.0 dB typ. at f = 200 MHz
• High gain
PG = 27.6 dB typ. at f = 200 MHz
Outline
3SK300
UHF / VHF RF Amplifier
ADE-208-449
1st. Edition
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK300
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
14 V
±8V
±8V
25 mA
2
3SK300
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Drain current I
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
V
(BR)DSX
V
(BR)G1SS
V
(BR)G2SS
G1SS
G2SS
DS(op)
G1S(off)
G2S(off)
14 — — V ID = 200 µA, V
V
= –3 V
G2S
±8— —V IG1 = ±10 µA,
V
= V
DS
G2S
±8— —V IG2 = ±10 µA,
V
= V
DS
G1S
——±100 nA V
——±100 nA V
G1S
V
DS
G2S
V
DS
= ±6 V,
= V
G2S
= ±6 V,
= V
G1S
4 8 14 mA VDS = 6 V, V
V
= 3 V
G2S
0 +0.2 +1.0 V VDS = 10 V, V
I
= 100 µA
D
0 +0.3 +1.0 V VDS = 10 V, V
I
= 100 µA
D
Forward transfer admittance |yfs| 20 25 — ms VDS = 6 V, V
I
= 10 mA, f = 1 kHz
D
Input capacitance Ciss 2.4 3.1 3.5 pF VDS = 6 V,
Output capacitance Coss 0.8 1.1 1.4 pF V
= 3 V, ID = 10 mA
G2S
Reverse transfer capacitance Crss — 0.021 0.04 pF f = 1 MHz
Power gain PG 24 27.6 — dB VDS = 6 V, V
Noise figure NF — 1.0 1.5 dB ID = 10 mA, f = 200 MHz
Power gain PG 12 15.6 — dB VDS = 6 V, V
Noise figure NF — 3.0 4.0 dB ID = 10 mA, f = 900 MHz
Noise figure NF — 2.7 3.5 dB VDS = 6 V, V
I
= 10 mA, f = 60 MHz
D
Note: Marking is “ZR–”
= 0
= 0
= 0
= 0
G1S
G2S
G2S
G2S
G2S
= –3 V,
G1S
= 0.75 V,
= 3 V,
G2S
= 3 V,
G1S
= 3 V,
= 3 V,
= 3 V,
= 3 V,
3
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