HIT 3SK297 Datasheet

Silicon N-Channel Dual Gate MOS FET

Application

UHF / VHF RF amplifier

Features

• Low noise figure.

NF = 1.0 dB typ. at f = 200 MHz

• Capable of low voltage operation

Outline

3SK297

ADE-208-389

1st. Edition

MPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

3SK297

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

12 V

±8V
±8V

25 mA

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSX

voltage
Gate 1 to source breakdown

V

(BR)G1SS

voltage
Gate 2 to source breakdown

V

(BR) G2SS

voltage
Gate 1 cutoff current I
Gate 2 cutoff current I
Drain current I

Gate 1 to source cutoff voltage V

Gate 2 to source cutoff voltage V

G1SS

G2SS

DS(on)

G1S(off)

G2S(off)

Forward transfer admittance |yfs| 16 20 — mS V

Input capacitance Ciss 2.4 2.9 3.4 pF V

Output capacitance Coss 0.8 1.0 1.4 pF
Reverse transfer capacitance Crss — 0.023 0.04 pF
Power gain PG 22 25 — dB V

Noise figure NF — 1.0 1.8 dB
Power gain PG 12 15 — dB V

Noise figure NF — 3.2 4.5 dB
Noise figure NF — 2.8 3.5 dB V

Note: Marking is “ZP–”

12 — — V ID = 200 µA , V

V

= –3 V

G2S

±8— —V IG1 = ±10 µA, V

±8— —V IG2 = ±10 µA, V

——±100 nA V
——±100 nA V

0.5 — 10 mA V

0 — +1.0 V V

0 — +1.0 V V

= ±6 V, V

G1S

= ±6 V, V

G2S

= 6 V, V

DS

V

= 3 V

G2S

= 10 V, V

DS

I

= 100 µA

D

= 10 V, V

DS

I

= 100 µA

D

= 6 V, V

DS

I

= 10 mA, f = 1 kHz

D

= 6 V, V

DS

I

= 10 mA, f = 1 MHz

D

= 6 V, V

DS

I

= 10 mA, f = 200 MHz

D

= 6 V, V

DS

I

= 10 mA, f = 900 MHz

D

= 6 V, V

DS

I

= 10 mA, f = 60 MHz

D

G1S

G2S

G1S

G2S

G2S

G2S

G2S

G2S

G2S

G1S

= 0.75V,

= 3V,

= 3V,

= 3V,

= 3V,

= 3V,

3SK297

= –3 V,

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= VDS = 0
= VDS = 0

= 3V,

= 3V,

3

3SK297

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0 50 100 150 200

Ambient Temperature Ta (°C)

Drain Current vs. Gate1 to Source Voltage

20

V = 6 V

DS

Pulse test

16

3.0 V

2.5 V

2.0 V

1.5 V

20

Typical Output Characteristics

V = 3 V

G2S

1.4 V

16

D

12

8

4

Drain current I (mA)

V = 0.4 V

G1S

Pulse test

1.2 V

1.0 V

0.8 V

0.6 V

0246810

Drain to source voltage V (V)

DS

Drain Current vs. Gate2 to Source Voltage

20

V = 6 V

DS

Pulse test

16

3.0 V

2.5 V

2.0 V

1.5 V

D

12

8

4

Drain current I (mA)

0

12345

1.0 V

V = 0.5 V

G2S

Gate1 to source voltage V (V)

G1S

12

D

8

4

Drain current I (mA)

0

V = 0.5 V

G1S

12345

Gate2 to source voltage V (V)

1.0 V

G2S

4