HIT 2SK3380 Datasheet
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
• 4 V gate drive device.
Outline
2SK3380
ADE-208-806 (Z)
1st.Edition.
June 1999
G
SPAK
D
1
2
3
1. Source
2. Drain
3. Gate
S
2SK3380
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
Note1
Channel dissipation Pch 300 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 145 220 — mS I
Input capacitance Ciss — 6 — pF VDS = 10 V
Output capacitance Coss — 18 — pF VGS = 0
Reverse transfer capacitance Crss — 2 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Note: 2. Pulse test
See characteristics curves of 2SK3288
30 — — V ID = 100 µA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±5 µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0
1.3 — 2.3 V ID = 10µA, VDS = 5 V
— 1.26 1.44 Ω I
— 2.8 3.44 Ω I
— 200 — ns ID = 150 mA, VGS = 10 V
— 600 — ns RL = 66.6 Ω
— 1100 — ns
— 1100 — ns
30 V
±20 V
300 mA
1.2 A
300 mA
= 150 mA,VGS = 10 V
D
= 50 mA,VGS = 4 V
D
= 150 mA, VDS =10 V
D
Note 2
Note 2
Note 2
2
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