HIT 2SK3378 Datasheet
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS =2.7 Ω typ. (VGS = 10 V , ID = 50 mA)
RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA)
• 4 V gate drive device.
• Small package (CMPAK)
Outline
2SK3378
ADE-208-805 (Z)
1st.Edition.
June 1999
CMPAK
G
3
1
D
S
2
1. Source
2. Gate
3. Drain
2SK3378
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note 2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs|5585—mSI
Input capacitance Ciss — 1.6 — pF VDS = 10 V
Output capacitance Coss — 7 — pF VGS = 0
Reverse transfer capacitance Crss — 0.5 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Note: 3. Pulse test
4. Marking is EN
See characteristics curves of 2SK3288
30 — — V ID = 100 µA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±5 µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0
1.3 — 2.3 V ID = 10µA, VDS = 5 V
— 2.7 3.5 Ω I
— 4.7 7.0 Ω I
— 100 — ns ID = 50 mA, VGS = 10 V
— 330 — ns RL = 200 Ω
— 1150 — ns
— 940 — ns
30 V
±20 V
100 mA
400 mA
100 mA
300 mW
= 50 mA,VGS = 10 V
D
= 20 mA,VGS = 4 V
D
= 50 mA, VDS =10 V
D
Note 3
Note 3
Note 3
2
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