HIT 2SK3349 Datasheet

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA)
RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA)

• 2.5 V gate drive device

• Small package (SMPAK)

Outline

2SK3349

ADE-208-804 (Z)

1st.Edition.

June 1999

SMPAK

G

3

1

2

D

1. Source

2. Gate

3. Drain

S

2SK3349

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs|5685—mSI
Input capacitance Ciss — 6 — pF VDS = 10 V
Output capacitance Coss — 7 — pF VGS = 0
Reverse transfer capacitance Crss — 1.2 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is DN

20——V I

±10——V I

——±5 µAV
——1 µAV

0.8 — 1.8 V ID = 10 µA, VDS = 5 V
— 2.8 3.6 Ω I
— 4.8 7.2 Ω I

— 120 — ns ID = 25 mA, VGS = 4 V
— 450 — ns RL = 400 Ω
— 480 — ns
— 500 — ns

20 V
±10 V
50 mA
200 mA
50 mA
100 mW

= 100 µA, VGS = 0

D

= ±100 µA, VDS = 0

G

= ±8 V, VDS = 0

GS

= 20 V, VGS = 0

DS

= 25 mA,VGS = 4 V

D

= 10 mA,VGS = 2.5 V

D

= 25 mA, VDS = 10 V

D

Note 3

Note 3

Note 3

2

Main Characteristics

2SK3349

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation *Pch (mW)

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic boad.(12.5x20x0.7mm)

Typical Output Characteristics

5 V

0.2
4 V

Pulse Test

3 V

0.16

D

0.12

Maximum Safe Operation Area

5

2

1.0

0.5

D

0.2

0.1

0.05

0.02

0.01

0.005

Drain Current I (A)

0.002

0.001

0.0005

Operation in this area
is limited by RDS(on)

0.05

0.1 1.0 10 50

0.2 0.5

Drain to Source Voltage V (V)

Value on the alumina ceramic boad.(12.5x20x0.7mm)

DC Operation

25

DS

PW = 10 ms

(1 shot)

20

Typical Transfer Characteristics

0.2
V = 10 V

DS

Pulse Test

0.16

D

0.12

10 µs

100 µs

1 ms

0.08

Drain Current I (A)

0.04

0

246810

Drain to Source Voltage V (V)

V = 2V

GS

DS

0.08

Drain Current I (A)

0.04

0

75 °C

12345

Gate to Source Voltage V (V)

25 °C

Tc = –25 °C

GS

3