HIT 2SK322 Datasheet
Application
HF wide band amplifier
Outline
MPAK
2SK322
Silicon N-Channel Junction FET
3
1
2
1. Drain
2. Source
3. Gate
2SK322
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Gate to drain voltage V
Gate to source voltage V
Drain current I
Gate current I
GDO
GSO
D
G
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate to drain breakdown
V
(BR)GDO
voltage
Gate to source breakdown
V
(BR)GSO
voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V
GSS
DSS
GS(off)
Forward transfer admittance |yfs| 25 45 — mS V
Note: 1. The 2SK322 is grouped by I
Grade P Q R S T
Mark WP WQ WR WS WT
I
DSS
5 to 16 14 to 24 20 to 32 28 to 42 36 to 50
–15 — — V IG = –100 µA
–15 — — V IG = –100 µA
— — –10 nA VGS = –7 V, VDS = 0
1
*
5 — 50 mA VDS = 5 V, VGS = 0 (pulse)
— — –3.0 V V
as follows.
DSS
–15 V
–15 V
50 mA
5mA
= 5 V, ID = 100 µA
DS
= 5 V, VGS = 0, f = 1 kHz
DS
2
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