HIT 2SK3215 Datasheet
2SK3215
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =350mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-764(Z)
Target Specification
1st. Edition
December 1998
TO–220AB
G
D
3
1. Gate
2. Drain(Flange)
3. Source
1
2
S
2SK3215
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics (Ta = 25°C)
200 V
±20 V
8A
32 A
8A
8A
4.2 mJ
40 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
200 — — V ID = 10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 200 V, VGS = 0
1.0 — 2.5 V ID = 1mA, VDS = 10V
— 0.35 0.40 Ω ID =4A, VGS = 10V
— 0.40 0.55 Ω ID =4A, VGS = 4V
Forward transfer admittance |yfs| 4 6.5 — S ID =4A, VDS = 10V
Input capacitance Ciss — 410 — pF VDS = 10V
Output capacitance Coss — 150 — pF VGS = 0
Reverse transfer capacitance Crss — 90 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 10 — ns ID =4A, VGS = 10V
— 45 — ns RL = 7.5Ω
— 100 — ns
—60—ns
— 0.95 — V IF = 8A, VGS = 0
— 100 — ns IF = 8A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
Note4
Note4
Note4
2
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