Zetex (Now Diodes) FMMT4402, FMMT4403 Schematic [ru]

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SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR

ISSUE 2 - MARCH 1995

 

FMMT4402

FMMT4403

PARTMARKING DETAILS: FMMT4402 - 2K

E

C

 

FMMT4403 - 2L

 

 

B

ABSOLUTE MAXIMUM RATINGS.

 

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-40

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-600

A

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

 

 

FMMT4402

FMMT4403

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

MIN.

MAX.

MIN.

 

MAX.

 

UNIT

CONDITIONS

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

-40

 

-40

 

 

 

V

IC=-1mA, IB=0

 

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Base

V(BR)CBO

-40

 

-40

 

 

 

V

IC=-0.1mA, IE=0

 

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter-Base

V(BR)EBO

-5

 

-5

 

 

 

V

IE=-0.1mA, IC=0

 

Breakdown Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

ICEX

 

-0.1

 

 

-0.1

 

μA

VCE=-35V

 

Cut-Off Current

 

 

 

 

 

 

 

 

VEB(off) =-0.4V

 

Base Cut-Off

IBEX

 

-0.1

 

 

-0.1

 

μA

VCE=-35V

 

Current

 

 

 

 

 

 

 

 

VEB(off) =-0.4V

 

Static Forward

hFE

 

 

30

 

 

 

 

IC=-0.1mA, VCE=-1V

 

Current

 

30

 

60

 

 

 

 

IC=-1mA, VCE=-1V

 

TransferRatio

 

50

 

100

 

 

 

 

IC=-10mA, VCE=-1V

 

 

 

50

150

100

 

300

 

 

IC=-150mA,VCE=-2V*

 

 

 

20

 

20

 

 

 

 

IC=-500mA,VCE=-2V*

 

Collector-Emitter

VCE(sat)

 

-0.4

 

 

-0.4

 

V

IC=-150mA,IB=-15mA*

 

Saturation Voltage

 

 

-0.75

 

 

-0.75

 

V

IC=-500mA,IB=-50mA*

 

Base-Emitter

VBE(sat)

-0.75

-0.95

-0.75

 

-0.95

 

V

IC=-150mA,IB=-15mA*

 

Saturation Voltage

 

 

-1.3

 

 

-1.3

 

V

IC=-500mA,IB=-50mA

 

Transition

fT

150

 

200

 

 

 

MHz

IC=-20mA,VCE=-10V

 

Frequency

 

 

 

 

 

 

 

 

f=100MHz

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

8.5

 

 

8.5

 

pF

VCB=-10 V,IE=0

 

 

 

 

 

 

 

 

 

 

f=100kHz

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance

Cibo

 

30

 

 

30

 

pF

VBE=0.5V

 

 

 

 

 

 

 

 

 

 

IC=0, f=100kHz

 

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%

 

 

 

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