Zetex (Now Diodes) FMMT549, FMMT549A Schematic [ru]
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SOT23 PNP SILICON PLANAR |
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FMMT549 |
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MEDIUM POWER TRANSISTORS |
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FMMT549A |
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ISSUE 3 - OCTOBER 1995 |
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FEATURES |
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* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A |
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* 1 Amp continuous current |
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C |
E |
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COMPLEMENTARY TYPES – FMMT549 |
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- FMMT449 |
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FMMT549A |
- N/A |
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PARTMARKING DETAIL – |
FMMT549 |
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- 549 |
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B |
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FMMT549A |
- 59A |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
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SYMBOL |
VALUE |
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UNIT |
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Collector-Base Voltage |
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VCBO |
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-35 |
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V |
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Collector-Emitter Voltage |
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VCEO |
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-30 |
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V |
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Emitter-Base Voltage |
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VEBO |
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-5 |
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V |
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Peak Pulse Current |
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ICM |
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-2 |
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A |
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Continuous Collector Current |
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IC |
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-1 |
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A |
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Base Current |
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IB |
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-200 |
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mA |
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Power Dissipation: at Tamb=25°C |
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Ptot |
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500 |
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mW |
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Operating and Storage Temperature Range |
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Tj:Tstg |
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-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). |
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PARAMETER |
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SYMBOL |
MIN. |
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TYP. |
MAX. |
UNIT |
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CONDITIONS. |
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Breakdown Voltages |
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V(BR)CBO |
-35 |
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V |
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IC=-100μA |
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V(BR)CEO |
-30 |
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V |
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IC=-10mA* |
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V(BR)EBO |
-5 |
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V |
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IE=-100μA |
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Cut-Off Currents |
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ICBO |
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-0.1 |
μA |
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VCB=-30V |
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-10 |
μA |
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VCB=-30V, Tamb=100°C |
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IEBO |
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-0.1 |
μA |
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VEB=-4V |
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Saturation Voltages |
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VCE(sat) |
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-0.25 |
-0.50 |
V |
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IC=-1A, IB=-100mA* |
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-0.50 |
-0.75 |
V |
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IC=-2A, IB=-200mA* |
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FMMT549A |
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-0.30 |
V |
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IC=-100mA, IB=-1mA* |
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VBE(sat) |
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-0.9 |
-1.25 |
V |
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IC=-1A, IB=-100mA* |
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Base Emitter Turn-on Voltage |
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VBE(on) |
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-0.85 |
-1 |
V |
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IC=-1A, VCE=-2V* |
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Static Forward Current |
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hFE |
70 |
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200 |
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IC=-50mA, VCE=-2V* |
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Transfer Ratio |
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80 |
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130 |
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IC=-1A, VCE=-2V* |
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40 |
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80 |
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IC=-2A, VCE=-2V* |
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FMMT549 |
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100 |
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160 |
300 |
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IC=-500mA, VCE=-2V* |
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FMMT549A |
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150 |
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200 |
500 |
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IC=-500mA, VCE=-2V* |
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Transition Frequency |
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fT |
100 |
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MHz |
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IC=-100mA, VCE=-5V |
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f=100MHz |
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Output Capacitance |
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Cobo |
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25 |
pF |
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VCB=-10V, f=1MHz |
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Switching Times |
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ton |
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50 |
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ns |
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IC=-500mA, VCC=-10V |
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toff |
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300 |
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ns |
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IB1=IB2=-50mA |
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*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2% 3 - 127