Zetex (Now Diodes) FMMT413 Schematic [ru]

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FMMT413

SOT23 NPN silicon planar avalanche transistor

Summary

V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A

Description

The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal for laser diode driving.

Features

Avalanche mode operation

50A peak avalanche current

Low inductance packaging

Applications

Laser LED drivers

Fast edge generation

High speed pulse generators

Ordering information

Device

Reel size

Tape width

Quantity per

 

(inches)

(mm)

reel

 

 

 

 

FMMT413TD

7

8

500

 

 

 

 

FMMT413TA

7

8

3,000

 

 

 

 

Device marking

413

C

B

E

E

C

B Pinout - top view

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FMMT413

Absolute maximum ratings

Parameter

Symbol

Limit

Unit

 

 

 

 

Collector-base voltage

BVCBO

150

V

Collector-emitter voltage

BVCEO

50

V

Emitter-base voltage

BVEBO

6

V

Peak pulse current (25ns Pulse Width)

ICM

50

A

Continuous collector current

IC

100

mA

 

 

 

 

Power dissipation at Tamb =25°C

PD

330

mW

Linear derating factor

 

 

 

 

 

 

 

Operating and storage temperature range

Tj, Tstg

-55 to +150

°C

Thermal resistance

Parameter

Symbol

Limit

Unit

 

 

 

 

Junction to ambient

R JA

378

°C/W

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FMMT413

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

 

 

 

 

 

 

 

Collector-base breakdown

BVCBO

150

 

 

V

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-emitter

BVCES

150

 

 

V

IC = 100 A

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-emitter

BVCEO

50

 

 

V

IC = 10mA

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter-base breakdown

BVEBO

6

 

 

V

IE = 100 A

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cut-off current

ICBO

 

 

100

nA

VCB = 120V

Emitter cut-off current

IEBO

 

 

100

nA

VEB = 4V

Collector-emitter saturation

VCE(sat)

 

 

150

mV

IC = 10mA,

voltage

 

 

 

 

 

IB = 1mA

 

 

 

 

 

 

 

Base-emitter saturation

VBE(sat)

 

 

800

mV

IC = 10mA,

voltage

 

 

 

 

 

IB = 1mA

Current in second

IUSB

22

 

 

A

VC=110V, CCE=4.7nF (*)

breakdown (pulsed)

 

 

 

 

 

 

 

 

25

 

 

A

VC=130V, CCE=4.7nF(*)

 

 

 

 

 

 

 

Static forward current

hFE

50

 

 

 

IC = 10mA,

transfer ratio

 

 

 

 

 

VCE = 10V

 

 

 

 

 

 

 

Collector-emitter

Lce

 

2.5

 

nH

Standard SOT23

inductance

 

 

 

 

 

leads

 

 

 

 

 

 

 

Transition frequency

fT

 

150

 

MHz

IC = 10mA, VCE = 5V,

 

 

 

 

 

 

f = 20MHz

 

 

 

 

 

 

 

Output capacitance

COBO

 

2

 

pF

VCB = 10V, IE = 0,

 

 

 

 

 

 

f = 1MHz

 

 

 

 

 

 

 

NOTES:

(*) Measured with a circuit possessing an approximate loop inductance of 12nH.

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