Zetex (Now Diodes) FMMT558 Schematic [ru]
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SOT23 NPN SILICON PLANAR |
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FMMT458 |
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HIGH VOLTAGE TRANSISTOR |
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ISSUE 4 – APRIL 2002 |
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FEATURES |
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* 400 Volt VCEO |
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E |
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C |
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COMPLEMENTARY TYPE – |
FMMT558 |
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B |
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PARTMARKING DETAIL – |
458 |
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ABSOLUTE MAXIMUM RATINGS. |
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SOT23 |
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PARAMETER |
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SYMBOL |
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VALUE |
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UNIT |
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Collector-Base Voltage |
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VCBO |
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400 |
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V |
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Collector-Emitter Voltage |
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VCEO |
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400 |
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V |
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Emitter-Base Voltage |
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VEBO |
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5 |
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V |
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Continuous Collector Current |
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IC |
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225 |
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mA |
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Peak Pulse Current |
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ICM |
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1 |
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A |
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Base Current |
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IB |
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200 |
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mA |
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Power Dissipation at Tamb=25°C |
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Ptot |
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500 |
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mW |
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Operating and Storage Temperature Range |
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Tj:Tstg |
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-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). |
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PARAMETER |
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SYMBOL |
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MIN. |
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MAX. |
UNIT |
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CONDITIONS. |
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Collector-Base |
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V(BR)CBO |
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400 |
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V |
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IC=100 A |
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Breakdown Voltage |
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Collector-Emitter |
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VCEO(sus) |
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400 |
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V |
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IC=10mA* |
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Breakdown Voltage |
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Emitter-Base |
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V(BR)EBO |
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5 |
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V |
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IE=100 A |
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Breakdown Voltage |
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Collector Cut-Off Current |
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ICBO |
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100 |
nA |
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VCB=320V |
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Collector Cut-Off Current |
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ICES |
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100 |
nA |
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VCE=320V |
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Emitter Cut-Off Current |
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IEBO |
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100 |
nA |
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VEB=4V |
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Collector-Emitter |
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VCE(sat) |
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0.2 |
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V |
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IC=20mA, IB=2mA* |
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Saturation Voltage |
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0.5 |
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V |
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IC=50mA, IB=6mA* |
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Base-Emitter |
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VBE(sat) |
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0.9 |
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V |
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IC=50mA, IB=5mA* |
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Saturation Voltage |
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Base-Emitter |
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VBE(on) |
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0.9 |
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V |
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IC=50mA, VCE=10V* |
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Turn On Voltage |
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Static Forward |
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hFE |
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100 |
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IC=1mA, VCE=10V |
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Current Transfer Ratio |
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100 |
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300 |
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IC=50mA, VCE=10V* |
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15 |
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IC=100mA, VCE=10V* |
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Transition Frequency |
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fT |
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50 |
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MHz |
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IC=10mA, VCE=20V |
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f=20MHz |
Output Capacitance |
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Cobo |
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5 |
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pF |
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VCB=20V, f=1MHz |
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Switching times |
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ton |
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135 Typical |
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ns |
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IC=50mA, VCC=100V |
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toff |
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2260 Typical |
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ns |
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IB1=5mA, IB2=-10mA |
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*Measured under pulsed conditions.
Spice parameter data is available upon request for this device