Zetex (Now Diodes) BSS84 Schematic [ru]

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SOT23 P-CHANNEL ENHANCEMENT

 

 

 

 

MODE VERTICAL DMOS FET

 

 

BSS84

 

ISSUE 2 – SEPTEMBER 1995

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARTMARKING DETAIL —

SP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

S

 

 

 

 

 

 

 

 

 

 

 

 

G

 

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

VALUE

UNIT

 

 

 

 

 

 

 

 

Drain-Source Voltage

 

VDS

-50

V

 

Continuous Drain Current

 

ID

-130

mA

 

Pulsed Drain Current

 

IDM

-520

mA

 

Gate-Source Voltage Peak

 

VGS

±20

V

 

Power Dissipation at Tamb=25°C

PTOT

360

mW

 

Operating and Storage Temperature Range

tj:tstg

-55 to +150

°C

 

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Drain-Source

BVDSS

-50

 

 

V

VGS=0V, ID=0.25mA

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source

VGS(th)

-0.8

-1.5

-2.0

V

VDS=VGS , ID=-1mA

Threashold Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Zero gate Voltage

IDSS

 

-1

-15

μA

Tj=25 °C

Drain Current

 

 

-2

-60

μA

Tj=125 °C

 

 

 

 

 

 

VDS=-50V, VGS=0V(2)

 

 

 

 

-100

 

T =25 °C

 

 

 

 

 

j

 

 

 

 

 

 

VDS=-25V, VGS=0V

Gate-Source Leakage

IGSS

 

-1

-10

nA

VGS = ±20V

Current

 

 

 

 

 

VDS=0V

Drain Source On-State

RDS(on)

 

6

10

Ω

VGS=-5V

Resistance (1)

 

 

 

 

 

ID=-100mA

Forward

gfs

0.05

0.07

 

S

VDS=-25V

Transconductance (1)

 

 

 

 

 

ID=-100mA

(2)

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance (2)

Ciss

 

40

 

 

VGS=0V

 

 

 

 

 

 

VDS=-25V

Output Capacitance

Coss

 

15

 

 

 

 

pF

f=1MHz

Reverse Transfer

Crss

 

6

 

 

 

Capacitance (2)

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Time ton

td(on)

 

10

 

 

VDD=-30V

 

 

 

 

 

 

ID=-0.27A

 

tr

 

10

 

 

 

 

 

ns

VGS=-10V

 

 

 

 

 

Turn-Off Time toff

td(off)

 

18

 

 

RGS=50Ω

 

tf

 

25

 

 

 

*(1) Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%

(2) Sample test.

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