Zetex (Now Diodes) BSS65, BSS65R Schematic [ru]

	SOT23 PNP SILICON PLANAR	BSS65
	HIGH SPEED TRANSISTOR

ISSUE 2 - SEPTEMBER 1995
PARTMARKING DETAIL —	BSS65 -	L1
	BSS65R -	L5				E
					C
						B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER			SYMBOL		VALUE	UNIT
Collector-Base Voltage			VCBO	-12		V
Collector-Emitter Voltage			VCEO	-12		V
Emitter-Base Voltage			VEBO	-4		V
Peak Pulse Current			ICM	-200		mA
Continuous Collector Current			IC	-100		mA
Base Current			IC	-50		mA
Power Dissipation at Tamb=25°C			PTOT	330		mW
Operating and Storage Temperature Range			tj:tstg	-55 to +150		°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER	SYMBOL	MIN.	TYP.	MAX.	UNIT	CONDITIONS.
BreakdownVoltages	V(BR)CEO	-12			V	IC=-10mA
	V(BR)CBO	-12			V	IC=-10μA *
	V(BR)EBO	-4			V	IE=-10μA
Cut-Off Currents	ICBO			-100	nA	VCB=-6V, IE=0
	IEBO			-100	nA	VEB=-4V, IC=0
Collector-Emitter	VCE(sat)			-0.15	V	IC=-10mA, IB=-1mA
Saturation Voltage				-0.25	V	IC=-30mA, IB=-3mA
Base-Emitter	VBE(sat)	-0.75		-0.98	V	IC=-10mA, IB=-1mA
Saturation Voltage		-0.82		-1.20	V	IC=-30mA, IB=-3mA
Static Forward Current	hFE	30				IC=-10mA, VCE=-0.3V
Transfer Ratio		40		150		IC=-30mA, VCE=-0.5V
Transition Frequency	fT	400			MHz	IC=-30mA, VCE=-10V,
						f=100MHz
Collector-Base	Cobo			6	pF	VCB=-5V, IE=0,
Capacitance						f=1MHz
Emitter Base Capacitance	Cebo			6	pF	VEB=-0.5V, IC=0, f=1MHz
Switching Times
Turn-On Time	ton		23	60	nS	IC=-30mA
Turn-Off Time	toff		34	90	nS	IB1 = -IB2= -1.5mA
						VCC=-10V

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