SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
FMMT2222
FMMT2222A
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222 1BZ FMMT2222A 1P
C
FMMT2222R 2P FMMT2222AR 3P
COMPLEMENTARY TYPES
B
FMMT2222 FMMT2907
FMMT2222A FMMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
60 75 V
30 40 V IC=10mA, IB=0
56V
10
10
Emitter Cut-Off
Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
Ratio
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
10 10 nA VEB=3V, IC=0
10 10 nA VCE=60V, V
0.3
1.0
0.6 2.0
0.6 1.2
2.6
300
35
50
75
35
100
50
40
µs. Duty cycle ≤ 2%
35
50
75
35
100
50
30
60 75 V
30 40 V
56V
600 mA
330 mW
-55 to +150 °C
10
10
0.3
1.0VV
=10µA, I
I
C
=10µA, I
I
E
V
nA
µA
nA
µA
CB
V
CB
V
CB
V
CB
IC=150mA, IB=15mA*
=500mA, IB=50mA*
I
C
=0
E
=0
C
=50V, IE=0
=60V, IE=0
=50V, IE=0, T
=60V, IE=0, T
EB(off)
amb
amb
=3V
=150°C
=150°C
IC=150mA, IB=15mA*
2.0VV
300
I
=500mA, IB=50mA*
C
I
=0.1mA, VCE=10V*
C
=1mA, VCE=10V
I
C
I
=10mA, VCE=10V*
C
=10mA, VCE=10V, T
I
C
=150mA, VCE=10V*
I
C
=150mA, VCE=1V*
I
C
I
=500mA, VCE=10V*
C
amb
=-55°C
E
FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Transition
Frequency
Output Capacitance C
Input Capacitance C
Delay Time t
Rise Time t
Storage Time t
Fall Time t
f
T
obo
ibo
d
r
s
f
250 300 MHz IC=20mA, VCE=20V
f=100MHz
88pFV
=10V, IE=0,
CB
f=140KHz
30 25 pF VEB=0.5V, IC=0
f=140KHz
10 10 ns VCC=30V, V
=150mA, IB1=15mA
25 25 ns
I
C
(See Delay Test Circuit)
225 225 ns VCC=30V, IC=150mA
= IB2=15mA
60 60 ns
I
B1
(See Storage Test
Circuit)
DELAY AND RISE TEST CIRCUIT
+30V
Generator rise time <2ns
0.5V
)<200ns
1
619
Ω
200
Ω
Scope:
R
> 100 k
in
Ω
Cin< 12 pF
Rise Time < 5 ns
Pulse width (t
Duty cycle = 2%
9.9V
0
BE(off)
=0.5V
STORAGE TIME AND FALL TIME TEST CIRCUIT
µs
=100
+16.2 V
0
-13.8 V
<5ns
Duty cycle = 2%
=500
Ω
1K
1N916
µ
s
+30V
Ω
200
Scope:
> 100 k
R
C
-3V
Rise Time < 5 ns
in
< 12 pF
in
Ω
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