Zetex (Now Diodes) FMMT2222, FMMT2222A, FMMT2222AR, FMMT2222R Schematic [ru]

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SOT23 NPN SILICON PLANAR

 

FMMT2222

SWITCHING TRANSISTORS

 

FMMT2222A

ISSUE 3 – FEBRUARY 1996

 

 

 

 

 

 

FEATURES

 

 

 

 

 

 

 

 

* Fast switching

 

 

 

PARTMARKING DETAILS

 

 

E

FMMT2222

– 1BZ

FMMT2222A

– 1P

C

 

FMMT2222R

– 2P

FMMT2222AR – 3P

 

COMPLEMENTARY TYPES

 

 

B

FMMT2222

– FMMT2907

 

 

 

FMMT2222A

– FMMT2907A

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

FMMT2222

 

FMMT2222A

UNIT

 

 

 

 

 

 

Collector-Base Voltage

VCBO

60

 

75

V

Collector-Emitter Voltage

VCEO

30

 

40

V

Emitter-Base Voltage

VEBO

5

 

6

V

Continuous Collector Current

IC

 

600

mA

Power Dissipation at Tamb=25°C

Ptot

 

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

FMMT2222

FMMT2222A

UNIT

CONDITIONS.

 

 

 

 

 

 

 

 

 

 

MIN.

MAX.

MIN.

MAX.

 

 

 

 

 

 

 

 

 

 

Collector-Base

V(BR)CBO

60

 

75

 

V

IC=10μA, IE=0

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

30

 

40

 

V

IC=10mA, IB=0

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter-Base

V(BR)EBO

5

 

6

 

V

IE=10μA, IC=0

Breakdown Voltage

 

 

 

 

 

 

 

Collector Cut-Off

ICBO

 

10

 

 

nA

VCB=50V, IE=0

Current

 

 

 

 

10

μA

VCB=60V, IE=0

 

 

 

10

 

 

nA

VCB=50V, IE=0, Tamb=150°C

 

 

 

 

 

10

μA

VCB=60V, IE=0, Tamb=150°C

Emitter Cut-Off

IEBO

 

10

 

10

nA

VEB=3V, IC=0

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

ICEX

 

10

 

10

nA

VCE=60V, VEB(off)=3V

Cut-Off Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

VCE(sat)

 

0.3

 

0.3

V

IC=150mA, IB=15mA*

Saturation Voltage

 

 

1.0

 

1.0

V

IC=500mA, IB=50mA*

Base-Emitter

VBE(sat)

0.6

2.0

0.6

1.2

V

IC=150mA, IB=15mA*

Saturation Voltage

 

 

2.6

 

2.0

V

IC=500mA, IB=50mA*

Static Forward

hFE

35

 

35

 

 

IC=0.1mA, VCE=10V*

Current Transfer

 

50

 

50

 

 

IC=1mA, VCE=10V

Ratio

 

75

 

75

 

 

IC=10mA, VCE=10V*

 

 

35

 

35

300

 

IC=10mA, VCE=10V, Tamb=-55°C

 

 

100

300

100

 

IC=150mA, VCE=10V*

 

 

50

 

50

 

 

IC=150mA, VCE=1V*

 

 

30

 

40

 

 

IC=500mA, VCE=10V*

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2% Spice parameter data is available upon request for this device

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