Zetex (Now Diodes) BST82 Schematic [ru]
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SOT23 N CHANNEL ENHANCEMENT |
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BST82 |
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IMODE VERTICAL DMOS FET |
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I |
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Issue 2 - October 1997 |
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PARTMARKING DETAIL – O2 |
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B |
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SOT23 |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
SYMBOL |
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VALUE |
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UNIT |
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Drain Source Voltage |
VDS |
80 |
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V |
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Drain Source Voltage |
VDS(sm) |
100 |
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V |
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(non repetitive peak tp ≤ 2ms) |
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Continuous Drain Current at Tamb=25°C |
ID |
175 |
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mA |
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Drain Current Peak |
IDM |
600 |
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mA |
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Gate-Source Voltage |
VGS |
± 20 |
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V |
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Max Power Dissipation at Tamb=25°C |
PD |
300 |
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mW |
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Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
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°C |
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ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Drain Source |
BVDSS |
80 |
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V |
IC=100μA |
Breakdown Voltage |
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Gate Source |
VGS(th) |
1.5 |
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3.5 |
V |
ID=1mA, VDS=VGS |
Threshold Voltage |
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Gate Body Leakage |
IGSS |
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100 |
nA |
VGS=20V |
Emitter Cut-Off |
IDSS |
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1 |
μA |
VDS=60V |
Current |
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Static Drain-Source |
RDS(on) |
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7 |
10 |
Ω |
ID=150mA, VGS=5V |
On-state Resistance |
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Transfer Admittance |
| yfs | |
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150 |
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mS |
ID=175mA, VDS=5V |
Input Capacitance (2) |
Ciss |
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15 |
30 |
pF |
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Common Source |
Coss |
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13 |
20 |
pF |
VDS=10V, VGS=0V |
Output Capacitance (2) |
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f=1MHz |
Reverse Transfer |
Crss |
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3 |
6 |
pF |
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Capacitance (2) |
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Switching Times |
Ton |
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4 |
10 |
ns |
ID=175mA, VDD=50V |
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VGS=0 to 10V |
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Toff |
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4 |
10 |
ns |
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(1)Swithcing times measured at 150Ω source impedance and <5ns rise time on a pulse generator
(2)Sample test
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%