Zetex (Now Diodes) BST82 Schematic [ru]

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SOT23 N CHANNEL ENHANCEMENT

 

BST82

IMODE VERTICAL DMOS FET

 

 

I

 

 

 

 

 

Issue 2 - October 1997

 

 

 

 

 

 

 

 

 

 

 

PARTMARKING DETAIL – O2

 

 

 

 

 

 

 

C

 

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B

 

 

 

 

SOT23

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

 

VALUE

 

UNIT

 

 

 

 

 

 

Drain Source Voltage

VDS

80

 

V

Drain Source Voltage

VDS(sm)

100

 

V

(non repetitive peak tp 2ms)

 

 

 

 

 

 

 

 

 

 

 

Continuous Drain Current at Tamb=25°C

ID

175

 

mA

Drain Current Peak

IDM

600

 

mA

Gate-Source Voltage

VGS

± 20

 

V

Max Power Dissipation at Tamb=25°C

PD

300

 

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

 

°C

ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Drain Source

BVDSS

80

 

 

V

IC=100μA

Breakdown Voltage

 

 

 

 

 

 

Gate Source

VGS(th)

1.5

 

3.5

V

ID=1mA, VDS=VGS

Threshold Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate Body Leakage

IGSS

 

 

100

nA

VGS=20V

Emitter Cut-Off

IDSS

 

 

1

μA

VDS=60V

Current

 

 

 

 

 

 

Static Drain-Source

RDS(on)

 

7

10

Ω

ID=150mA, VGS=5V

On-state Resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

Transfer Admittance

| yfs |

 

150

 

mS

ID=175mA, VDS=5V

Input Capacitance (2)

Ciss

 

15

30

pF

 

Common Source

Coss

 

13

20

pF

VDS=10V, VGS=0V

Output Capacitance (2)

 

 

 

 

 

 

 

 

 

 

 

f=1MHz

Reverse Transfer

Crss

 

3

6

pF

 

Capacitance (2)

 

 

 

 

 

 

Switching Times

Ton

 

4

10

ns

ID=175mA, VDD=50V

 

 

 

 

 

 

VGS=0 to 10V

 

Toff

 

4

10

ns

 

 

 

(1)Swithcing times measured at 150Ω source impedance and <5ns rise time on a pulse generator

(2)Sample test

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%

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