Zetex (Now Diodes) FMMTH10 Schematic [ru]
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SOT23 NPN SILICON PLANAR |
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FMMTH10 |
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RF TRANSISTOR |
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ISSUE 2 – NOVEMBER 1995 |
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FEATURES |
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* |
High fT=650MHz |
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* |
Maximum capacitance 0.7pF |
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C |
E |
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* Low noise < 5dB at 500MHz |
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B |
PARTMARKING DETAIL – |
3EZ |
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ABSOLUTE MAXIMUM RATINGS. |
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SOT23 |
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PARAMETER |
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SYMBOL |
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VALUE |
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UNIT |
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Collector-Emitter Voltage |
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VCES |
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30 |
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V |
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Collector-Emitter Voltage |
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VCEO |
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25 |
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V |
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Emitter-Base Voltage |
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VEBO |
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3 |
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V |
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Continuous Collector Current |
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IC |
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25 |
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mA |
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Peak Pulse Current |
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ICM |
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50 |
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mA |
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Power Dissipation at Tamb=25°C |
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Ptot |
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330 |
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mW |
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Operating and Storage Temperature Range |
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Tj:Tstg |
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-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) |
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PARAMETER |
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SYMBOL |
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MIN. |
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MAX. |
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UNIT |
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CONDITIONS. |
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Collector-Base Breakdown |
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V(BR)CBO |
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30 |
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V |
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IC=100μA, IE=0 |
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Voltage |
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Collector-Emitter |
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V(BR)CEO |
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25 |
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V |
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IC=1mA, IB=0 |
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Breakdown Voltage |
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Emitter-Base Breakdown |
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V(BR)EBO |
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3 |
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V |
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IE=10μA, IC=0 |
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Voltage |
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Collector Cut-Off |
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ICBO |
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100 |
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nA |
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VCB=25V, IE=0 |
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Current |
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Emitter Cut-Off Current |
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IEBO |
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100 |
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nA |
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VEB=2V,IC=0 |
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Collector-Emitter Saturation |
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VCE(sat) |
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0.5 |
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V |
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IC=4mA, IB=0.4mA |
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Voltage |
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Common Base Feedback |
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Crb |
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Typ. |
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0.65 |
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pF |
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VCB=10V, IE=0 |
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Capacitance |
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0.45 |
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f=1MHz |
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Base-Emitter Turn-On |
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VBE(on) |
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0.95 |
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V |
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IC=4mA, VCE=10V |
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Voltage |
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Static Forward Current |
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hFE |
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60 |
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IC=4mA, VCE=10V* |
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Transfer Ratio |
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Transition Frequency |
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fT |
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650 |
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MHz |
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IC=4mA, VCE=10V, f=100MHz |
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Collector Base Capacitance |
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Ccb |
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0.7 |
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pF |
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VCB=10V, IE=0, f=1MHz |
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Collector Base Time Constant |
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rbCc |
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9 |
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ps |
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IC=4mA, VCB=10V, f=31.8MHz |
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Noise Figure |
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Nf |
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Typ. |
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5 |
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dB |
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IC=2mA, VCE=5V |
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3 |
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f=500MHz, |
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*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2% Spice parameter data is available upon request for this device
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