Zetex (Now Diodes) FMMT4124 Schematic [ru]

SOT23 NPN SILICON PLANAR

SWITCHING TRANSISTOR

FMMT4124

ISSUE 2 – MARCH 94

PARTMARKING DETAIL –

ZC

C

E

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

5

V

Continuous Collector Current

IC

200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

V(BR)CBO

30

V

IC=10μA

Breakdown Voltage

Collector-Emitter

V(BR)CEO

25

V

IC=1mA*

Breakdown Voltage

Emitter-Base

V(BR)EBO

5

V

IE=10μA

Breakdown Voltage

Collector Cut-Off Current

ICBO

50

nA

VCB=20V

Emitter Cut-Off Current

IEBO

50

nA

VEB=3V

Collector-Emitter

VCE(sat)

0.3

V

IC=50mA, IB=5mA*

Saturation Voltage

Base-Emitter

VBE(sat)

0.95

V

IC=50mA, IB=5mA*

SaturationVoltage

Static Forward

hFE

120

360

IC=2mA, VCE=1V*

Current Transfer Ratio

60

IC=50mA, VCE=1V*

Transistion Frequency

fT

300

MHz

IC=10mA, VCE=20V, f=100MHz

Output Capacitance

Cobo

4

pF

VCB=5V, IE=0, f=140KHz

Input Capacitance

Cibo

8

pF

VBE=0.5V, IE=0, f=140KHz

Noise Figure

N

6

dB

IC=200μA, VCE=5V, Rg=2kΩ

f=30Hz to 15KHz at 3dB points

Small Signal Current

hfe

120

480

IC=2mA, VCE=1V, f=1KHz

Transfer

SWITCHING CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

TYP.

UNIT

CONDITIONS

Delay Time

td

24

ns

VCC=3V, VBE(off)=0.5V

Rise Time

t

13

ns

IC=10mA, IB1=1mA

r

Storage Time

ts

125

ns

VCC=3V, IC=10mA

Fall Time

t

11

ns

IB1=IB2=1mA

f

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%