Zetex (Now Diodes) HT3 Schematic [ru]

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SOT23 PNP SILICON PLANAR

 

HIGH VOLTAGE TRANSISTOR

HT3

 

ISSUE 2 - SEPTEMBER 1995

 

 

PARTMARKING DETAIL - 3T

 

 

 

E

 

C

 

B

ABSOLUTE MAXIMUM RATINGS.

 

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

-90

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-100

mA

Power Dissipation at Tamb = 25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

Collector-Base

V(BR)CBO

-90

 

V

IC=-10μA

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

-80

 

V

IC=-2mA

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

Emitter-Base Breakdown

V(BR)EBO

-5

 

V

IE=-10μA

Voltage

 

 

 

 

 

 

 

 

 

 

 

Collector Cut-Off

ICBO

 

-100

nA

VCB=-80V, IE=0

Current

 

 

 

 

 

 

 

 

 

 

 

 

ICES

 

-100

nA

VCE=-80V, VBE=0

 

 

 

-5

μA

VCE=-80V, VBE=0

 

 

 

 

 

Tj=125°C

 

ICEX

 

-10

μA

VCE=-80V,VBE=-0.2V, Tj=85°C

Emitter Cut-Off Current

IEBO

 

-200

nA

VEB=-4V

Static Forward Current

hFE

30

 

 

IC=-100μA, VCE=-1V

Transfer Ratio

 

35

 

 

IC=-1mA, VCE=-1V

 

 

50

 

 

IC=-10mA, VCE=-1V

 

 

30

 

 

IC=-50mA, VCE=-1V

Collector-Emitter

VCE(sat)

 

-750

mV

IC=-50mA, IB=-5mA

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

Base-Emitter

VBE(sat)

 

-1.1

V

IC=-50mA, IB=-5mA

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

10

pF

VCB=-10V, IE=0, f=1MHz

Transition

fT

50

 

MHz

IC=-10mA, VCE=-5V

Frequency

 

 

 

 

f=10MHz

 

 

 

 

 

 

Switching Times

ton

 

500

ns

IC=-10ma,

 

toff

 

1000

ns

IB1 = IB2 = -1ma

3-60

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