Zetex (Now Diodes) HT3 Schematic [ru]
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SOT23 PNP SILICON PLANAR |
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HIGH VOLTAGE TRANSISTOR |
HT3 |
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ISSUE 2 - SEPTEMBER 1995 |
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PARTMARKING DETAIL - 3T |
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E |
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C |
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B |
ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
SYMBOL |
VALUE |
UNIT |
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Collector-Base Voltage |
VCBO |
-90 |
V |
Collector-Emitter Voltage |
VCEO |
-80 |
V |
Emitter-Base Voltage |
VEBO |
-5 |
V |
Continuous Collector Current |
IC |
-100 |
mA |
Power Dissipation at Tamb = 25°C |
Ptot |
330 |
mW |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
°C |
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER |
SYMBOL |
MIN. |
MAX. |
UNIT |
CONDITIONS. |
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Collector-Base |
V(BR)CBO |
-90 |
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V |
IC=-10μA |
Breakdown Voltage |
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Collector-Emitter |
V(BR)CEO |
-80 |
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V |
IC=-2mA |
Breakdown Voltage |
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Emitter-Base Breakdown |
V(BR)EBO |
-5 |
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V |
IE=-10μA |
Voltage |
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Collector Cut-Off |
ICBO |
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-100 |
nA |
VCB=-80V, IE=0 |
Current |
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ICES |
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-100 |
nA |
VCE=-80V, VBE=0 |
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-5 |
μA |
VCE=-80V, VBE=0 |
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Tj=125°C |
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ICEX |
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-10 |
μA |
VCE=-80V,VBE=-0.2V, Tj=85°C |
Emitter Cut-Off Current |
IEBO |
|
-200 |
nA |
VEB=-4V |
Static Forward Current |
hFE |
30 |
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IC=-100μA, VCE=-1V |
Transfer Ratio |
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35 |
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IC=-1mA, VCE=-1V |
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50 |
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IC=-10mA, VCE=-1V |
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30 |
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IC=-50mA, VCE=-1V |
Collector-Emitter |
VCE(sat) |
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-750 |
mV |
IC=-50mA, IB=-5mA |
Saturation Voltage |
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Base-Emitter |
VBE(sat) |
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-1.1 |
V |
IC=-50mA, IB=-5mA |
Saturation Voltage |
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Output Capacitance |
Cobo |
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10 |
pF |
VCB=-10V, IE=0, f=1MHz |
Transition |
fT |
50 |
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MHz |
IC=-10mA, VCE=-5V |
Frequency |
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f=10MHz |
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Switching Times |
ton |
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500 |
ns |
IC=-10ma, |
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toff |
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1000 |
ns |
IB1 = IB2 = -1ma |
3-60