Zetex (Now Diodes) FMMT2484 Schematic [ru]

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SOT23 NPN SILICON PLANAR

 

 

 

 

 

 

 

SMALL SIGNAL TRANSISTOR

 

 

 

 

FMMT2484

 

 

 

 

 

 

 

ISSUE 2 – MARCH 94

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FEATURES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

* 60 Volt VCEO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

E

 

 

 

 

 

 

 

 

 

PARTMARKING DETAIL – 4G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

SOT23

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

SYMBOL

 

VALUE

 

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Base Voltage

 

 

VCBO

 

60

 

V

 

Collector-Emitter Voltage

 

 

VCEO

 

60

 

V

 

Emitter-Base Voltage

 

 

VEBO

 

6

 

V

 

Peak Pulse Current

 

 

ICM

 

200

 

mA

 

Continuous Collector Current

 

IC

 

50

 

mA

 

Power Dissipation at Tamb=25°C

 

Ptot

 

330

 

mW

 

Operating and Storage Temperature Range

Tj:Tstg

 

 

-55 to +150

 

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

 

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

 

CONDITIONS.

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Base

V(BR)CBO

60

 

V

 

IC=10μA, IE=0

 

 

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

60

 

V

 

IC=10mA, IB=0*

 

 

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

Emitter-Base

V(BR)EBO

6

 

V

 

IE=10μA, IC=0

 

 

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

Collector Cut-Off Current

ICBO

 

10

nA

 

VCB=45V, IE=0

 

 

 

 

 

10

μA

 

VCB=45V, IE=0, Tamb=150°C

 

Emitter Cut-Off Current

IEBO

 

10

nA

 

VBE=5V

 

 

Collector-Emitter

VCE(sat)

 

0.35

V

 

IC=1mA, IB=100μA*

 

 

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

Base-Emitter Voltage

VBE

 

0.95

V

 

IC=1mA, VCE=5V*

 

 

Static Forward

hFE

30

 

 

 

IC=1μA, VCE=5V*

 

 

Current Transfer

 

100

500

 

 

IC=10μA, VCE=5V*

 

 

Ratio

 

20

 

 

 

IC=10μA, VCE=5V, Tamb=55°C

 

 

 

175

 

 

 

IC=100μA, VCE=5V*

 

 

 

 

200

 

 

 

 

μ

 

 

 

 

250

 

 

 

IC=500 A, VCE=5V*

 

 

 

 

800

 

 

IC=1mA, VCE=5V*

 

 

 

 

 

 

 

IC=10mA, VCE=5V*

 

 

Output Capacitance

Cobo

 

6

pF

 

VCB=5V, IE=0, f=140KHz

 

Input Capacitance

Cibo

 

6

pF

 

VBE=0.5V, IE=0, f=140KHz

 

Noise Figure

N

 

3

dB

 

IC=200μA, VCE=5V, Rg=2kΩ

 

 

 

 

 

 

 

f=1kHz, f=200Hz

 

 

 

 

 

3

dB

 

IC=200μA, VCE=5V, Rg=2kΩ

 

 

 

 

 

 

 

f=30Hz to 15kHz at -3dB points

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%

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