Zetex (Now Diodes) FMMT413 Schematic [ru]
FMMT413
SOT23 NPN silicon planar avalanche transistor
Summary
V
(BR)CES
= 150V, V
(BR)CEO
= 50V, I
USB
= 25A
Description
The FMMT413 is a NPN silicon planar bipolar transistor optimized for
avalanche mode operation. Tight process control and low inductance
packaging combine to produce high current pulses with fast edges, ideal
for laser diode driving.
Features
• Avalanche mode operation
• 50A peak avalanche current
• Low inductance packaging
Applications
• Laser LED drivers
• Fast edge generation
• High speed pulse generators
C
B
E
E
Ordering information
Device Reel size
(inches)
FMMT413TD 7 8 500
FMMT413TA 7 8 3,000
Tape width
(mm)
Quantity per
reel
C
B
Pinout - top view
Device marking
413
Issue 3 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
FMMT413
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Peak pulse current (25ns Pulse Width) I
Continuous collector current I
Power dissipation at T
amb
=25°C
CBO
CEO
EBO
CM
C
P
D
150 V
50 V
6V
50 A
100 mA
330 mW
Linear derating factor
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
R
⍜JA
378 °C/W
Issue 3 - March 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
FMMT413
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
BV
CBO
150 V
voltage
Collector-emitter
BV
CES
150 V IC = 100A
breakdown voltage
Collector-emitter
BV
CEO
50 V IC = 10mA
breakdown voltage
Emitter-base breakdown
BV
EBO
6VI
= 100A
E
voltage
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
CBO
EBO
V
CE(sat)
V
BE(sat)
100 nA VCB = 120V
100 nA VEB = 4V
150 mV IC = 10mA,
I
= 1mA
B
800 mV IC = 10mA,
= 1mA
I
B
Current in second
I
USB
22 A
breakdown (pulsed)
25 A
Static forward current
h
FE
50 IC = 10mA,
transfer ratio
Collector-emitter
L
ce
2.5 nH Standard SOT23
inductance
Transition frequency f
Output capacitance C
NOTES:
(*) Measured with a circuit possessing an approximate loop inductance of 12nH.
T
OBO
150 MHz IC = 10mA, VCE = 5V,
2pFV
=110V, CCE=4.7nF
V
C
=130V, CCE=4.7nF
V
C
= 10V
V
CE
leads
f = 20MHz
= 10V, IE = 0,
CB
f = 1MHz
(*)
(*)
Issue 3 - March 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
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