Zetex (Now Diodes) FMMT4124 Schematic [ru]
SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 MARCH 94 ✪
PARTMARKING DETAIL ZC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
SaturationVoltage
Static Forward
Current Transfer Ratio
Transistion Frequency f
Output Capacitance C
Input Capacitance C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
T
obo
ibo
30 V
25 V IC=1mA*
5V
120
60
300 MHz IC=10mA, VCE=20V, f=100MHz
Noise Figure N 6 dB
Small Signal Current
Transfer
h
fe
120 480 IC=2mA, VCE=1V, f=1KHz
SWITCHING CHARACTERISTICS (at T
PARAMETER SYMBOL TYP. UNIT CONDITIONS
Delay Time t
Rise Time t
Storage Time t
Fall Time t
*Measured under pulsed conditions. Pulse width=300
d
r
s
f
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
amb
50 nA VCB=20V
50 nA VEB=3V
0.3 V IC=50mA, IB=5mA*
0.95 V IC=50mA, IB=5mA*
360 IC=2mA, VCE=1V*
4pFV
8pFV
= 25°C).
amb
24 ns VCC=3V, V
13 ns
125 ns VCC=3V, IC=10mA
11 ns
µs. Duty cycle ≤ 2%
FMMT4124
C
30 V
25 V
5V
200 mA
330 mW
-55 to +150 °C
=10µA
I
C
=10µA
I
E
=50mA, VCE=1V*
I
C
=5V, IE=0, f=140KHz
CB
=0.5V, IE=0, f=140KHz
BE
=200µA, V
I
C
f=30Hz to 15KHz at 3dB points
=10mA, IB1=1mA
I
C
I
=1mA
B1=IB2
BE(off)
=5V, R
CE
=0.5V
B
=2kΩ
g
E
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