Zetex (Now Diodes) FMMT3903, FMMT3904 Schematic [ru]

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS

ISSUE 2 – SEPTEMBER 94 ✪

COMPLIMENTARY TYPES – FMMT3903 - FMMT3905

FMMT3904 - FMMT3906

FMMT3903
FMMT3904

C

E

PARTMARKING DETAIL – FMMT3903 - 1W

FMMT3904 - 1A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CollectorEmitter Voltage V
EmitterBase Voltage V
Continuous Collector Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

FMMT3903 FMMT3904

PARAMETER SYMBOL

Collector Base
Breakdown Voltage

CollectorEmitter
Breakdown Voltage

EmitterBase
Breakdown Voltage

CollectorEmitter
CutOff Current

Base CutOff
Current

Static Forward
Current Transfer

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

BEX

h

FE

Ratio

MIN. MAX. MIN. MAX.
60 60 V

40 40 V IC=1mA, IB=0*

66 V

50 50 nA VCE=30V, V

50 50 nA VCE=30V, V

20
35
50

150
30
15

CollectorEmitter
Saturation Voltage

BaseEmitter
Saturation Voltage

Transition
Frequency

Output
Capacitance

Input Capacitance C

V

CE(sat)

V

BE(sat)

f

T

C

obo

ibo

0.2

0.3

0.65 0.85

0.95

250 300 MHz IC=10mA, VCE=20V

44pFV

88pFV

CBO

CEO

EBO

C

tot

j:Tstg

= 25°C unless otherwise stated).

UNIT

40
70
100

300
60
30

0.2

0.3

0.65 0.85

0.95

VVIC=10mA, IB=1mA*

VVIC=10mA, IB=1mA*

60 V
40 V

6V
200 mA
330 mW

-55 to +150 °C

CONDITIONS.

=10µA, IE=0

I

C

=10µA, IC=0

I

E

=3V

BE(off)

EB(off)

=3V

IC=0.1mA, VCE=1V*

=1mA, VCE=1V*

I

C

I

=10mA, VCE=1V*

C

I

=50mA, VCE=1V*

C

I

=100mA, VCE=1V*

C

=50mA, IB=5mA*

I

C

I

=50mA, IB=5mA*

C

f=100MHz

=5V, IE=0, f=100KHz

CB

=0.5V, IC=0, f=100KHz

BE

B

78

FMMT3903
FMMT3904

SWITCHING CHARACTERISTICS (at T

PARAMETER SYMBOL

Noise Figure N 6 5 dB

Delay Time t

Rise Time t

Storage Time t

Fall Time t

d

r

s

f

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

FMMT3903 FMMT3904

MIN. MAX. MIN. MAX.

= 25°C unless otherwise stated).

amb

UNIT

35 35 ns VCC=3V, IC=10mA,

35 35 ns

175 200 ns VCC=3V, IC=10mA

50 50 ns

CONDITIONS.

=5V IC=200µA,

V

CE

=2KΩ

R

g

f=30Hz to 15KHz at

-3dB points

I

=1mA

B1

V

=0.5V

BE(off)

(See Figure1)

I

= IB2=1mA

B1

(See Figure2)

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