Philips ES1B, ES1D, ES1C, ES1A Datasheet

Philips ES1B, ES1D, ES1C, ES1A Datasheet

DISCRETE SEMICONDUCTORS

SMA ES1 series

Ultra fast low-loss

controlled avalanche rectifiers

Product specification

2000 Jan 19

Philips Semiconductors

Product specification

 

 

 

 

Ultra fast low-loss

SMA ES1 series

controlled avalanche rectifiers

FEATURES

Glass passivated

High maximum operating temperature

Ideal for surface mount automotive applications

DESCRIPTION

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads.

Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

UL 94V-O classified plastic package

Shipped in 12 mm embossed tape

Marking: cathode, date code, type code

Easy pick and place.

Fig.1 Simplified outline (DO-214AC) and symbol.

 

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 134).

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VRRM

repetitive peak reverse voltage

 

 

 

 

 

ES1A

 

50

V

 

ES1B

 

100

V

 

ES1C

 

150

V

 

ES1D

 

200

V

 

 

 

 

 

 

VR

continuous reverse voltage

 

 

 

 

 

ES1A

 

50

V

 

ES1B

 

100

V

 

ES1C

 

150

V

 

ES1D

 

200

V

 

 

 

 

 

 

VRMS

root mean square voltage

 

 

 

 

 

ES1A

 

35

V

 

ES1B

 

70

V

 

ES1C

 

105

V

 

ES1D

 

140

V

 

 

 

 

 

 

IF(AV)

average forward current

averaged over any 20 ms period;

1.0

A

 

 

 

Ttp = 120 °C; see Fig.2

 

 

 

IFSM

non-repetitive peak forward current

t = 8.3 ms half sine wave;

25

A

 

 

 

Tj = 25 °C prior to surge;

 

 

 

 

 

 

VR = VRRMmax

 

 

 

Tstg

storage temperature

 

65

+175

°C

Tj

junction temperature

See Fig.3

65

+175

°C

2000 Jan 19

2

Philips Semiconductors

Product specification

 

 

Ultra fast low-loss

SMA ES1 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

 

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

VF

forward voltage

 

IF = 1 A; see Fig.4

-

-

1.10

V

IR

reverse current

 

VR = VRRMmax; see Fig.5

-

-

5

mA

 

 

 

VR = VRRMmax; Tj = 165 °C; see

-

-

100

mA

 

 

 

Fig.5

 

 

 

 

 

 

 

 

 

 

 

 

 

trr

reverse recovery time

 

when switched from IF = 0.5 A to

-

-

25

ns

 

 

 

IR = 1 A; measured at IR = 0.25 A;

 

 

 

 

 

 

 

see Fig.9

 

 

 

 

 

 

 

 

 

 

 

 

 

Cd

diode capacitance

 

VR = 4 V; f = 1 MHz; see Fig.6

-

19

-

pF

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

 

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

 

 

Rth j-tp

thermal resistance from junction to tie-point; see Fig.7

 

 

27

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

 

100

K/W

 

 

 

 

 

note 2

 

150

K/W

 

 

 

 

 

 

 

 

 

Notes

1.Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ³35 mm.

2.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm. For more information please refer to the ‘General Part of associated Handbook’.

2000 Jan 19

3

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