National Semiconductor MM54HC521, MM74HC521 Service Manual

4 (1)
National Semiconductor MM54HC521, MM74HC521 Service Manual

January 1988

MM54HC521/MM74HC521

8-Bit Magnitude Comparator (Equality Detector)

General Description

This equality detector utilizes advanced silicon-gate CMOS technology to compare bit for bit two 8-bit words and indi-

cates whether or not they are equal. The PeQ output indicates equality when it is low. A single active low enable is provided to facilitate cascading of several packages and enable comparison of words greater than 8 bits.

This device is useful in memory block decoding applications, where memory block enable signals must be generated from computer address information.

The comparator's output can drive 10 low power Schottky equivalent loads. This comparator is functionally and pin

compatible to the 54LS688/74LS688 and the 54HC688/ 74HC688. All inputs are protected from damage due to static discharge by diodes to VCC and ground.

Features

YTypical propagation delay: 20 ns

YWide power supply range: 2 ± 6V

YLow quiescent current: 80 mA (74 Series)

YLarge output current: 4 mA (74 Series)

YIdentical to 'HC688

Connection and Logic Diagrams

Dual-In-Line Package

TL/F/6128 ± 1

Top View

Order Number MM54HC521 or MM74HC521

Truth Table

 

Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

Data

 

Enable

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P,Q

 

 

G

PeQ

TL/F/6128 ± 2

P e Q

 

 

L

 

L

 

P l Q

 

 

L

 

H

 

P k Q

 

 

L

 

H

 

X

 

 

H

 

H

 

 

 

 

 

 

 

 

 

 

Detector) (Equality Comparator Magnitude Bit-8 MM54HC521/MM74HC521

C1995 National Semiconductor Corporation

TL/F/6128

RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Notes 1 and 2)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.

Supply Voltage (VCC)

b0.5 to a7.0V

DC Input Voltage (VIN)

b1.5 to VCCa1.5V

DC Output Voltage (VOUT)

b0.5 to VCCa0.5V

Clamp Diode Current (IIK, IOK)

g20 mA

DC Output Current, per pin (IOUT)

g25 mA

DC VCC or GND Current, per pin (ICC)

g50 mA

Storage Temperature Range (TSTG)

b65§C to a150§C

Power Dissipation (PD)

 

(Note 3)

600 mW

S.O. Package only

500 mW

Lead Temperature (TL)

260§C

(Soldering 10 seconds)

DC Electrical Characteristics (Note 4)

Operating Conditions

 

Min

Max

Units

Supply Voltage (VCC)

2

6

V

DC Input or Output Voltage

0

VCC

V

(VIN, VOUT)

 

 

 

Operating Temp. Range (TA)

b40

a85

§C

MM74HC

MM54HC

b55

a125

§C

Input Rise or Fall Times

 

 

 

(tr, tf) VCCe2.0V

 

1000

ns

VCCe4.5V

 

500

ns

VCCe6.0V

 

400

ns

 

 

 

 

TAe25§C

74HC

54HC

 

Symbol

Parameter

Conditions

VCC

TAeb40 to 85§C

TAeb55 to 125§C

Units

 

 

 

 

Typ

 

Guaranteed Limits

 

 

 

 

 

 

 

 

 

 

VIH

Minimum High Level

 

2.0V

 

1.5

1.5

1.5

V

 

Input Voltage

 

4.5V

 

3.15

3.15

3.15

V

 

 

 

6.0V

 

4.2

4.2

4.2

V

 

 

 

 

 

 

 

 

 

VIL

Maximum Low Level

 

2.0V

 

0.5

0.5

0.5

V

 

Input Voltage**

 

4.5V

 

1.35

1.35

1.35

V

 

 

 

6.0V

 

1.8

1.8

1.8

V

 

 

 

 

 

 

 

 

 

VOH

Minimum High Level

VINeVIH or VIL

 

 

 

 

 

 

 

Output Voltage

lIOUTls20 mA

2.0V

2.0

1.9

1.9

1.9

V

 

 

 

4.5V

4.5

4.4

4.4

4.4

V

 

 

 

6.0V

6.0

5.9

5.9

5.9

V

 

 

 

 

 

 

 

 

 

 

 

VINeVIH or VIL

 

 

 

 

 

 

 

 

lIOUTls4.0 mA

4.5V

4.2

3.98

3.84

3.7

V

 

 

lIOUTls5.2 mA

6.0V

5.7

5.48

5.34

5.2

V

VOL

Maximum Low Level

VINeVIH or VIL

 

 

 

 

 

 

 

Output Voltage

lIOUTls20 mA

2.0V

0

0.1

0.1

0.1

V

 

 

 

4.5V

0

0.1

0.1

0.1

V

 

 

 

6.0V

0

0.1

0.1

0.1

V

 

 

 

 

 

 

 

 

 

 

 

VINeVIH or VIL

 

 

 

 

 

 

 

 

lIOUTls4.0 mA

4.5V

0.2

0.26

0.33

0.4

V

 

 

lIOUTls5.2 mA

6.0V

0.2

0.26

0.33

0.4

V

IIN

Maximum Input

VINeVCC or GND

6.0V

 

g0.1

g1.0

g1.0

mA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Maximum Quiescent

VINeVCC or GND

6.0V

 

8.0

80

160

mA

 

Supply Current

IOUTe0 mA

 

 

 

 

 

 

Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.

Note 2: Unless otherwise specified all voltages are referenced to ground.

Note 3: Power Dissipation temperature derating Ð plastic ``N'' package: b12 mW/§C from 65§C to 85§C; ceramic ``J'' package: b12 mW/§C from 100§C to 125§C.

Note 4: For a power supply of 5V g10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing with this supply. Worst case VIH and VIL occur at VCCe5.5V and 4.5V respectively. (The VIH value at 5.5V is 3.85V.) The worst case leakage current (IIN, ICC, and IOZ) occur for CMOS at the higher voltage and so the 6.0V values should be used.

**VIL limits are currently tested at 20% of VCC. The above VIL specification (30% of VCC) will be implemented no later than Q1, CY'89.

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