HIT BB102C Datasheet
BB102C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-588 (Z)
1st. Edition
November 1997
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 2.1 dB typ. at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
3
2
• Note 1 Marking is “BW–”.
• Note 2 BB302C is individual type number of HITACHI BBFET.
BB102C
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DS
12 V
Gate1 to source voltage V
G1S
+10
–0
V
Gate2 to source voltage V
G2S
±10 V
Drain current I
D
25 mA
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
12 — — V ID = 200µA, V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+10 — — V IG1 = +10µA, V
G2S
= VDS = 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
±10 — — V IG2 = ±10µA, V
G1S
= VDS = 0
Gate1 to source cutoff current I
G1SS
— — +100 nA V
G1S
= +9V, V
G2S
= VDS = 0
Gate2 to source cutoff current I
G2SS
——±100 nA V
G2S
= ±9V, V
G1S
= VDS = 0
Gate1 to source cutoff voltage V
G1S(off)
0.1 — 0.8 V VDS = 9V, V
G2S
= 6V, ID = 100µA
Gate2 to source cutoff voltage V
G2S(off)
0.5 — 1.1 V VDS = 9V, V
G1S
= 9V, ID = 100µA
Drain current I
D(op)
10 15 20 mA V
D
S
= 9V, V
G
1
= 9V, V
G2S
= 6V
R
G
= 560kΩ
Forward transfer admittance |yfs| 16 21 — mS V
D
S
= 9V, V
G
1
= 9V, V
G2S
=6V
R
G
= 560kΩ, f = 1kHz
Input capacitance c
iss
1.2 1.6 2.2 pF VDS = 9V, VG1 = 9V
Output capacitance c
oss
0.7 1.1 1.5 pF V
G2S
=6V, RG = 560kΩ
Reverse transfer capacitance c
rss
— 0.011 0.03 pF f = 1MHz
Power gain PG 16 20 — dB VDS = 9V, VG1 = 9V, V
G2S
=6V
Noise figure NF — 2.1 3.1 dB RG = 120kΩ, f = 900MHz
BB102C
3
Main Characteristics
Gate 1
Source
Drain
Gate 2
R
G
A
I
D
V
G2 V
G1
Output
Input
V = 6 to 0.3 V
AGC
V = 9 V
DS
R
G
V = 9 V
GG
BBFET
RFC
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
Application Circuit
BB102C
4
200
150
100
50
0
50 100 150 200
25
20
15
10
5
0
1.2 2.4 3.8 4.8 6.0
20
16
12
8
4
0
246810
0
246810
25
20
15
10
5
R = 2.2 M
G
Ω
V = 6 V
V = V
G2S
G1 DS
V = 9 V
R = 470 k
Ω
DS
G
270 k
Ω
330 k
Ω
390 k
Ω
470 k
Ω
560 k
Ω
680 k
Ω
1 MΩ
1.5 MΩ
820 k
Ω
R = 2.2 M
G
Ω
270 k
Ω
330 k
Ω
390 k
Ω
470 k
Ω
560 k
Ω
680 k
Ω
1 MΩ
1.5 MΩ
820 k
Ω
V = V = 9 V
DS
G1
V = 1 V
G2S
6 V
5 V
4 V
3 V
2 V
Channel Power Dissipation Pch (mW)
Ambient Temperature Ta (¡C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage V (V)
DS
Drain Current I (mA)
D
Typical Output Characteristics
Drain Current I (mA)
D
Drain Current I (mA)
D
Gate2 to Source Voltage V (V)
G2S
Gate1 Voltage V (V)
G1
Drain Current vs. Gate1 Voltage
Drain Current vs.
Gate2 to Source Voltage
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