HIT BB101C Datasheet
BB101C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-505
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
1st. Edition
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
BB101C
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate 1 to source voltage V
Gate 2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
6V
+6
V
–0
±6V
25 mA
2
BB101C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source break down
V
(BR)DSS
6——VI
voltage
Gate 1 to source breakdown
V
(BR)G1SS
+6 — — V IG1 = +10 µA
voltage
Gate 2 to source breakdown
V
(BR)G2SS
±6— —V IG2 = +10 µA
voltage
Gate 1 to source cutoff current I
Gate 2 to source cutoff current I
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
D(op)
— — +100 nA V
——±100 nA V
0.2 — 0.8 V VDS = 5 V, V
0.4 — 1.0 V VDS = 5 V, V
10 15 20 mA VDS = 5 V, VG1 = 5 V
Forward transfer admittance |yfs| 16 22 — mS VDS = 5 V, VG1 = 5 V
Input capacitance Ciss 1.2 1.7 2.2 pF VDS = 5 V, VG1 = 5 V
Output capacitance Coss 0.7 1.1 1.5 pF V
Reverse transfer capacitance Crss — 0.012 0.03 pF f = 1 MHz
Power gain PG 16 20 — dB VDS = 5 V, VG1 = 5 V
Noise figure NF — 2.0 3.0 dB RG = 220 kΩ, f = 900 MHz
Note: Marking is “AU–”.
= 200 µA
D
V
= V
G1S
V
G2S
V
G1S
G1S
V
G2S
G2S
V
G1S
I
= 100 µA
D
I
= 100 µA
D
V
G2S
V
G2S
R
= 220 kΩ, f = 1 kHz
G
G2S
V
G2S
= 0
G2S
= VDS = 0
= VDS = 0
= +5 V
= VDS = 0
= ±5 V
= VDS = 0
= 4 V
G2S
= 5 V
G1S
= 4 V, RG = 220 kΩ
= 4 V
= 4 V, RG = 220 kΩ
= 4 V
3
BB101C
Main Characteristics
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2 V
Gate 2
Drain
A
I
D
D(op)
Gate 1
Source
R
G
G1
Application Circuit
V = 4 to 0.3 V
AGC
BBFET
V = 5 V
DS
Output
Input
R
G
V = 5 V
GG
4
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