HIT 4AK27 Datasheet
Features
e
• Low on-resistance
R
≤ 0.15Ω, VGS = 10V, ID = 3.0A
DS(on)
• 4V gate drive devices.
• High density mounting
Outline
4AK27
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-728 (Z)
1st. Edition
January 1999
SP-10
G
2
S
1
1
2
3
10
4
5
6
7
8
9
10
1, 10. Sourc
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
3
D
4
G
5
D
6
G
7
D
8
G
9
D
S
4AK27
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy1 E
Channel dissipation Pch(Tc=25˚C)
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
AP
AR
Note1
Note2
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 4 devices poeration
3. Value at Tch=25˚C, Rg ≥ 50Ω
60 V
±20 V
5A
20 A
5A
5A
2.1 mJ
28 W
4W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state resistance R
Static drain to source on state resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 3.0 5.5 — S ID = 3A, VDS = 10V
Input capacitance Ciss — 390 — pF VDS = 10V
Output capacitance Coss — 190 — pF VGS = 0
Reverse transfer capacitance Crss — 45 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse recovery time t
d(on)
r
d(off)
f
DF
rr
Note: 4. Pulse test
60 — — V ID = 10mA, VGS = 0
±20 — — V IG = ±100µA, VDS = 0
— — 100 µAVDS = 50 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
1.0 — 2.25 V ID = 1mA, VDS = 10V
— 0.12 0.15 Ω ID = 3A, VGS = 10V
— 0.15 0.2 Ω ID = 3A, VGS = 4V
— 10 — ns VGS = 10V, ID = 3A
— 42 — ns RL = 10Ω
—90—ns
—55—ns
— 1.0 — V IF = 5A, VGS = 0
— 60 — ns IF = 5A, VGS = 0
diF/ dt =50A/µs
4AK27
Note4
Note4
Note4
3
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