HIT 4AK26 Datasheet
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R
≤ 0.06 , VGS = 10 V, ID = 5 A
DS(on)
R
≤ 0.075 , VGS = 4 V, ID = 5 A
DS(on)
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver and solenoid driver and lamp driver
Outline
SP-12
1
2
3
2
1
G
D
S 3
5
G
4
D
8
G
S 6 S 7 S 10
9
D
12
G
11
D
4
5
6
7
8
9
10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
11
12
4AK26
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Devices operation
60 V
±20 V
10 A
32 A
10 A
4W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs|1012—SI
Input capacitance Ciss — 1400 — pF VDS = 10 V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 220 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse Test
60 — — V ID = 10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.045 0.06 Ω ID = 5 A
V
= 10 V*
GS
— 0.056 0.075 Ω ID = 5 A
V
= 4 V*
GS
= 5 A
D
V
= 10 V*
DS
1
1
1
— 15 — ns ID = 10 A
— 95 — ns VGS = 10 V
— 300 — ns RL = 3 Ω
— 170 — ns
— 1.05 — V IF = 10 A, VGS = 0
— 110 — µsI
= 10 A, VGS = 0,
F
dIF/dt = 50 A/µs
4AK26
3
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